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    ATC600L Search Results

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    ATC600L Price and Stock

    Kyocera AVX Components

    Kyocera AVX Components 600L1R1AT200T/500P REEL

    Silicon RF Capacitors / Thin Film 200V 1.1pF Tol 0.05pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L1R1AT200T/500P REEL Reel 33,000 500
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    • 1000 $0.67
    • 10000 $0.60
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    Kyocera AVX Components 600L0R8AT200T/500

    Silicon RF Capacitors / Thin Film 200V 0.8pF Tol 0.05pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L0R8AT200T/500 Reel 17,000 500
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    • 1000 $0.70
    • 10000 $0.67
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    Kyocera AVX Components 600L100JT200T

    Silicon RF Capacitors / Thin Film 200V 10pF Tol 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L100JT200T Reel 13,500 500
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    • 1000 $0.41
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    Kyocera AVX Components 600L8R2BT200T/500

    Silicon RF Capacitors / Thin Film 200V 8.2pF Tol 0.1pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L8R2BT200T/500 Reel 13,000 500
    • 1 -
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    • 1000 $0.90
    • 10000 $0.82
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    Kyocera AVX Components 600L1R0BT200T/500

    Silicon RF Capacitors / Thin Film 200V 1pF Tol 0.1pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600L1R0BT200T/500 Reel 12,500 500
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    • 1000 $0.45
    • 10000 $0.38
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    Find more ATC600L price and stock on Findchips.com

    ATC600L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		MSWS4T-1004 A17141 PDF

    Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA


    Original     		MSWSH-100-30 A17090 PDF

    CGH55030

    Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
    Contextual Info: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal


    Original     		CGH55030F CGH55030F CGH5503 CGH55030 256qam CGH5503 CGH55030F-TB ATC600L PDF

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 CGH5503 CGH55030 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM PDF

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit CGH55030 CGH5503 CGH55030P1 CGH55030-TB 440166 ATC600L PDF

    CGH55030F2

    Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 PDF

    Contextual Info: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		MSWS3T-1004 A17140 PDF

    Contextual Info: MSWS5T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #16 PIN #5 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground PIN #2 Description Features A SP5T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		MSWS5T-1004 A17142 PDF

    Contextual Info: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		MSWS3T-1004 A17140 PDF

    Contextual Info: MSW5T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #16 PIN #5 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground PIN #2 Description Features A SP5T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal


    Original     		MSW5T-1004 A17142 PDF

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE PDF

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 32QAM circuit ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030P1 CGH55030-TB PDF

    RO4350B

    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B PDF

    hemt .s2p

    Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 hemt .s2p PDF

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 PDF

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 PDF

    Contextual Info: MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 Features •       MAGX-000245-025000 GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package


    Original     		MAGX-000245-025000 MAGX-000245-025000 PDF

    RO4350B

    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		CGH55030F1 CGH55030P1 CGH55030F1/CGH55030P1 CGH5503 CGH55 030F1 RO4350B PDF

    A55167

    Abstract: MSWSH-100-30
    Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA


    Original     		MSWSH-100-30 A17090 A55167 MSWSH-100-30 PDF