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    CGH55030F1 Search Results

    CGH55030F1 Datasheets (1)

    Cree/Wolfspeed
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGH55030F1
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166 Original PDF 780.39KB
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    CGH55030F1 Price and Stock

    MACOM

    MACOM CGH55030F1

    GaN FETs GaN HEMT 5.5-5.8GHz, 30 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH55030F1 18
    • 1 $239.76
    • 10 $206.05
    • 100 $206.05
    • 1000 $206.05
    • 10000 $206.05
    		Buy Now

    CGH55030F1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGH5503

    Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		cgh55030f1cgh55030p1cgh55030f1/cgh55030p1cgh5503+8cgh55030f1cgh55030cgh55030-tbs 0934ro4350batc600l128-qam PDF

    32QAM circuit

    Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		cgh55030f1cgh55030p1cgh55030f1/cgh55030p1cgh5503+7cgh55030f132qam circuitcgh55030cgh55030-tb440166atc600l PDF

    32QAM circuit

    Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		cgh55030f1cgh55030p1cgh55030f1/cgh55030p1cgh5503+7cgh55030f132qam circuitatc600s32qam modulationcgh55030cgh55030-tb PDF

    RO4350B

    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		cgh55030f1cgh55030p1cgh55030f1/cgh55030p1cgh5503+3cgh55030f1ro4350b PDF

    RO4350B

    Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1


    Original     		cgh55030f1cgh55030p1cgh55030f1/cgh55030p1cgh5503+3cgh55030f1ro4350b PDF