2N1595
Abstract: 2N1599 2N1596
Contextual Info: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C
|
Original
|
2n15952n15992n15962n1597+12n1598
|
PDF
|
2N3055
Abstract: 2n3055 pin
Contextual Info: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
|
Original
|
2n30552n3055 pin |
PDF
|
MJ1000
Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Contextual Info: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and
|
Original
|
mj900/901/1000/1001mj900mj901mj1000+4mj1001ic 901adc 515comset
|
PDF
|
VOLTAGE-60
Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
|
Original
|
2n23222n23262n2323voltage-60 |
PDF
|
2N3442
Abstract: 2N4347 transistor 2n3442 2n3442 datasheet ic20
Contextual Info: 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage –
|
Original
|
2n34422n4347transistor 2n34422n3442 datasheet+1ic20
|
PDF
|
32H6910
Abstract: comclock TR12 Voltage Regulator 3.3V
Contextual Info: SSI 32H6910 12 V VCM/Spindle Driver Prototype EN TS April 1999 DESCRIPTION FEATURES The SSI 32H6910 is a VCM and spindle motor driver intended for cost-conscious desktop applications up to 4 disks. It is housed in a 64-Pin TQFP deep downset package that, when installed using recommended
|
Original
|
32h691064-pincomclocktr12+1voltage regulator 3.3v
|
PDF
|
BU2508AF
Abstract: bu2508af equivalent TRANSISTOR BU2508AF
Contextual Info: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol
|
Original
|
bu2508afo-218bu2508af equivalenttransistor bu2508af |
PDF
|
BD241
Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
Contextual Info: NPN BD241, A, B, C, PNP BD242, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors, the complementary PNP are BD242, A, B, C. They are the silicon epitaxial-base Power Transistors for use in medium power linear and
|
Original
|
bd241bd242o-220bd241/bd242+9bd241a/bd242abd241b/bd242bbd241c/bd242cbd241cbd242cbd242abd241abd241bbd242/a/b/c
|
PDF
|
CC1H2,5
Abstract: SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R
Contextual Info: Microcomputer Components 8-Bit CMOS Microcontroller C509-L Data Sheet 09.96 C509-L 8-Bit CMOS Microcontroller C509-L Advance Information • • • • • • • • • • • • • Full upward compatibility with SAB 80C517/80C517A and 8051/C501 microcontrollers
|
Original
|
c509-l80c517/80c517a8051/c50116-mhz+1116-bitcc1h2,5saf-c509-lmcmh1.5icc1780c517acc1h4sab-c509-lm80c517ct1fct1r
|
PDF
|
SAA1029
Abstract: of and gate power supply vcc high voltage 2 input and 2 input nand gate 24v 2 input and gate 24v 6 pin DIL And Gate SAA1029IC SAA1029 equivalent IC AND GATE pin configuration
Contextual Info: SAA1029 UNIVERSAL INDUSTRIAL LOGIC AND INTERFACE CIRCUIT GENERAL DESCRIPTION The SAA1029 is a universal bipolar logic and interface IC with high noise immunity and operational stability for industrial control applications. The most fundamental industrial control functions can be accomplished with only one SAA1029IC. Figure 1 shows the logic
|
Original
|
saa1029saa1029icvcc24vof and gate power supply vcc+6high voltage 2 input and2 input nand gate 24v2 input and gate 24v6 pin dil and gatesaa1029 equivalentic and gate pin configuration
|
PDF
|
BD142
Abstract: Comset
Contextual Info: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
|
Original
|
bd142comset |
PDF
|
CT1F
Abstract: smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509
Contextual Info: C509-L ht User's Manual 11.97 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C509-L Data Sheet Revision History : 11.97 Previous Releases : 06.96 Original Version Page (new version) Page (prev. Subjects (changes since last revision)
|
Original
|
c509-lto11-9ct1fsmd transistor c009+88051-uartsmd diode s6 43asmd transistor c006plm51sab-c500cc1h4sab-c509tx c509
|
PDF
|
BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
Contextual Info: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
|
Original
|
bdx66bdx66abdx66bbdx66c+2bdx66b bdx66a bdx66c22b
|
PDF
|
MJ3001
Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
Contextual Info: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.
|
Original
|
mj2500mj2501mj3000mj3001+3transistor mj3001mj3001 equivalentmj3000/mj3001
|
PDF
|
|
|
2N6254
Abstract: 2N6253 2n6371 e978
Contextual Info: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.
|
Original
|
2n62532n62542n6371e978 |
PDF
|
2N3792
Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
|
Original
|
2n3713/2n3714/2n3715/2n37162n3789/2n3790/2n3791/2n37922n37132n3714+72n37152n37162n37892n37902n37912n3792pnp 2n3791
|
PDF
|
BD182
Abstract: Fh21e BD181 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 BD183
Contextual Info: BD181 – BD182 – BD183 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators.
|
Original
|
bd181bd182bd183fh21e+62n60502n60512n60522n60572n60582n6059
|
PDF
|
80C51
Abstract: 80C517 80C517A 83C517A-5 83C517A-5N pocket Scale block diagram
Contextual Info: Microcomputer Components SAB 80C517A/83C517A-5 8-Bit CMOS Single-Chip Microcontroller Addendum to User’s Manual SAB 80C517/80C537 Edition 05.94 This edition was realized using the software system FrameMaker. Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73,
|
Original
|
80c517a/83c517a-580c517/80c537p-lcc-84p-mqfp-100-2+680c5180c51780c517a83c517a-583c517a-5npocket scale block diagram
|
PDF
|
"Digital Comparator"
Abstract: ARM str7 half bridge pwm controller L6460 DO5040H STPS15 GPIO14 16599
Contextual Info: AN3097 Application note EVAL6460 demonstration board based on the L6460 SPI configurable stepper and DC multi motor driver Introduction The L6460 is optimized to control and drive multi-motor systems, providing a unique level of integration in terms of control, power, and auxiliary features. Thanks to its high
|
Original
|
an3097eval6460l6460digital comparator+6arm str7half bridge pwm controllerdo5040hstps15gpio1416599
|
PDF
|
2N3716
Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
|
Original
|
2n3713/2n3714/2n3715/2n37162n3789/2n3790/2n3791/2n37922n37132n3714+82n37152n37162n37892n37902n37912n3792pnp 2n3791npn transistor 2n3713
|
PDF
|
tip147
Abstract: TIP146 TIP145 tip147 transistor tip142 tip147 TIP140 TIP141 TIP142
Contextual Info: TIP145, TIP146, TIP147 NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base PNP transistors in monolithic Darlington configuration and are mounted in SOT93 plastic packtage. They are intended for use in power linear and switching application.
|
Original
|
tip145tip146tip147tip140+4tip141tip142tip147 transistortip142 tip147
|
PDF
|
2N5322
Abstract: 2N5323
Contextual Info: PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS
|
Original
|
2n53222n5323 |
PDF
|
BDX20
Contextual Info: BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage
|
Original
|
bdx20 |
PDF
|
BC160
Abstract: BC161 transistor bc160 BC161-10 BC140 BC141
Contextual Info: PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. NPN complements are the BC140 – BC141.
|
Original
|
bc160/10bc160/16bc161/10bc161/16+6bc140bc141bc160bc161transistor bc160bc161-10
|
PDF
|