BSS80C Search Results

Contextual Info: PART OBSOLETE SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage

Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

MV SOT23

Abstract: partmarking 6 Cc PARTMARKING at BSS80B BSS80C DSA003681
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage

BSS80B

Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

Contextual Info: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e

Contextual Info: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSU E 2 - SEPTEM BER 95 Q_ PARTMARKING DETAIL — BSS80B - CH B S S8 0 C - CJ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO

Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

BSS79

Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BSS80B

Abstract: BSS80C BSS82B BSS82C DSA003681
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS82B BSS82C PARTMARKING DETAILS - BSS82B - CL BSS82C - CM C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

VHF Transistors

Abstract: BCS46B BCS47B FMMT415 BC846A BC846B BC850B BC850C BCV71 BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS NPN v :E(sat) h FE min./max. „ at lç/V CE max at Ip/lg mA/volts Volts mA typ. MHz V CBO V CEO •c mA P,ot mW BC846A 80 65 100 350 1 1 0/22 0 2/5 0 .2 5 10/0.5 BC846B 80 65 100 350 2 0 0 /4 5 0 2/5

FMMT2222A

Abstract: FMMT2907 FMMT5551
Contextual Info: Section S: Bipolar Transistors Small Signal Devices O th er SO T23 S m all Signal Devices Supplied Listing Only G eneral Purpose Transistors (D atasheets A v a il a b le on Request) Pinout : 1-Collector, 2-Emitter, 3-Base

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

FMMT415

Abstract: VHF Transistors BC856A BC856B BC857A BC857B BCW69 BCW70 BCW89 FMMT3905
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS PNP Type BC856A P,o, V ^E(sat) Hf min./max. Eat Ir/V CE max at Iç/I b m A/volts Volts mA typ. MHz 150 yc,B° V CEO 'c mA mW 80 65 100 350 11 0/22 0 Volts Volts 2/5 0 .3 10/0.5 BC856B 80 65 100 350

VHF Transistors

Abstract: ZTX325 2N2708 FMMT415 BC849B BC849C BC850B BC850C BC860A BC860B
Contextual Info: SOT-23 TRANSISTORS & DIODES LOW NOISE TRANSISTORS VCBO VCEO lc Volts Volts mA Type P to t mW v ;E(sat hFE min./max. at Iq/V ce max at Ic/Ib mA/volts Volts mA fT typ. MHz NPN FMMT5209 FMMT5210 BC850B BC850C FMMT5088 BC849B BC849C FMMT5089 50 50 50 50 35 30

BC338 hie hre hfe

Abstract: BD371C-10 bc368 hie BD370B-10 BD371D BD371C BF936 BF494 BF495 b055
Contextual Info: National Bipolar Pro Electron Series Semiconductor c/> Case Style VCEO VeBO V (V) Min Min Ices ’ •cBOg. (nA) Max 50* TO-92 (97) 60* BC327-10 TO-92 (97) 50* 45 5 100* 45 40 63 BC327-16 TO-92 (97) 50* 45 5 100* 45 40 100 TO-92 (97) 50* TO-92 (97) 30' TO-92