BD939 Search Results

Contextual Info: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

HSOP20

Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD Panels DCDC Converter type BD9394FP, BD9394EFV ●General Description BD9394FP, BD9394EFV is a high efficiency driver for white LEDs and designed for large LCDs. This IC is built-in a boost DCDC converters that employ an array of

BD9397EFV

Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD panel BD9397EFV ●General Description BD9397EFV is a high efficiency driver for white LEDs and designed for large LCD panel. This IC is built-in high current drive and high responsibility type 6ch LED

HSOP20

Abstract: HSOP-20
Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD Panels DCDC Converter type BD9394FP, BD9394EFV ●General Description BD9394FP, BD9394EFV is a high efficiency driver for white LEDs and designed for large LCDs. This IC is built-in a boost DCDC converters that employ an array of

Contextual Info: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

D939

Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD Panels DCDC Converter type BD9394FP, BD9394EFV ●General Description BD9394FP, BD9394EFV is a high efficiency driver for white LEDs and designed for large LCDs. This IC is built-in a boost DCDC converters that employ an array of

BD9397

Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD panel BD9397EFV ●General Description BD9397EFV is a high efficiency driver for white LEDs and designed for large LCD panel. This IC is built-in high current drive and high responsibility type 6ch LED

BD939F

Abstract: BD-939F
Contextual Info: SavantIC Semiconductor Product Specification BD939F Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

3BS transistor

Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Contextual Info: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,

transistor BD939F

Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.

Contextual Info: Datasheet LED Drivers for LCD Backlights White LED Driver for large LCD panel BD9397EFV ●General Description BD9397EFV is a high efficiency driver for white LEDs and designed for large LCD panel. This IC is built-in high current drive and high responsibility type 6ch LED

BD939F

Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

B0938

Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
Contextual Info: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —