BD941F Search Results

Contextual Info: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

BD941F

Contextual Info: SavantIC Semiconductor Product Specification BD941F Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

transistor BD939F

Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.

BD939F

Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

936F

Contextual Info: BD934F; BD936F BD938F; BD940F BD942F PHILIPS INTERNATIONAL SbE D • 7110ÔEL 0 D 4 3 0 b 4 SGM « P H I N “ SILICON EPITAXIAL POWER TRANSISTORS T -5 J - PNP Silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BD936F

Abstract: BD938F 942F BD933F BD934F BD935F BD937F BD939F BD940F BD941F
Contextual Info: I _ PHILIPS INTERNATIONAL 5bE D BD934F; BD936F BD938F; BD940F BD942F_ 711002b 00430bH SOM M P H I N m SILICON EPITAXIAL POWER TRANSISTORS T -3 3 - 7 PNP silicon power transistor in a SOT186 envelope w ith an electrically insulated mounting base,

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

3BS transistor

Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Contextual Info: BD933F; BD935F BD937F; BD939F _ _ _ BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40