BC560
Contextual Info: N AMER PHILIPS/DISCRETE b'lE I> bbSaiBl QQE7S81 Tbb BC559 BC560 _ ; v _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
|
OCR Scan
|
qqe7s81bc559bc560bc559a+2bc559bbc560a
|
PDF
|
BC107 equivalent transistors
Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued
|
Original
|
2n16132n17112n18932n2219+162n2219a2n2222/a2n2369/a2n24842n29052n2905abc107 equivalent transistors2n5401 equivalentbc557 equivalent2n2907 equivalent2n2905 replacementbc327 equivalentbc237 equivalentmpsa06 equivalentequivalent for bc337bc327 replacement
|
PDF
|
BC56C
Abstract: BC560 BC 559 philips BC 560 philips BC559A BC559B BC560 equivalent BC560B BC559 bc 560 equivalent
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE 1> •3 ji 0 Q E 7 5 Ö 1 Tbb H A P X bbäB^Bl L BC559 BC560 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for tow-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
|
OCR Scan
|
0qe75bc559bc5605to10v+9200hzbc56cbc 559 philipsbc 560 philipsbc559abc559bbc560 equivalentbc560bbc 560 equivalent
|
PDF
|
BC560 equivalent
Contextual Info: BC559 BC560 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO -92 package. Q U IC K R E F E R E N C E D A T A BC559 BC560 C o lle c to r-e m itte r voltage l+ V g ^ = 0 V - V CES max. C o lle c to r-e m itte r voltage open base) - v CEO
|
OCR Scan
|
bc559bc560bc559abc560a+3bc559bbc560bbc560 equivalent
|
PDF
|
transistor BC 667
Abstract: transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247
Contextual Info: - asc î • öE35bG5 o o o m ^ b a « s i e û - D PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 SIEMENS AKTIEN6ESELLSCHAF- f"-2$ - 2./ ' for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in
|
OCR Scan
|
235b05bc556-bc560bc5561q62702-c692+16bc556viq62702-c692-v3bc556aq62702-c692-v1bc556bq62702-c692-v2transistor bc 667transistor bc 247transistor bc 245transistor bc 657bc 667bc667transistor bc 658transistor bc 567transistor bc 660bc 247
|
PDF
|
BC 560 philips
Abstract: BC560 philips BC560 d0420 BC559 philips semiconductors AL102 BC560C equivalent BC560 equivalent BC560B BC560C
Contextual Info: BC559 BC560 PHILIPS INTERNATIONAL SL E D • 7 1 1 Q û 2 b 00420*42 75b ■ PH IN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, prim arily intended fo r low-noise inp ut stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
|
OCR Scan
|
bc559bc560711qflebt-21-zi+11t-29-21711002tbc 560 philipsbc560 philipsd0420bc559 philips semiconductorsal102bc560c equivalentbc560 equivalentbc560bbc560c
|
PDF
|
MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
|
Original
|
bas32bas45bav105ll4148+15ll4448bb241bb249ll914ll4150mmbd2104transistor nec 05fhp2835 diodezener diode t2dwhat is the equivalent of ztx 458 transistormmbd2103t2d diode 3wt2d 8n2n2222 as equivalent for bfr96mmbf4932
|
PDF
|
MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
|
Original
|
bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249mmbd2103zener diode t2dmmbd2101mmbd2102mmbd2104smd codesbc107 transistor smd code package sot23transistor nec 05fbat15-115snds358n
|
PDF
|
SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
|
Original
|
bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249smd codestransistor smd t1pmmbd2104baw92smd transistor a6aschottky diode s6 81aa4s smd transistortransistor smd a7stransistor smd p2fmmbd2101
|
PDF
|
2n1613 equivalent
Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection
|
Original
|
sc-70/sot-323bav99wt1bav99lt1bav99rwt1+8msc1621t1msc2404msd1819amv1620mv16242n1613 equivalentbc237diode l 0607
|
PDF
|
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
|
Original
|
od-80od123/323ot-23ot346+16ot-323ot-416ot-223ot-89ot-143ot-363smd code booktransistor smd p1fmarking code w16 smd transistortransistor smd marking code jgsmd transistor ww1transistor smd a7sdiode smd l4wsmd diode zener code pj 78smd transistor wv4motorola transistor smd marking codes
|
PDF
|
BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
|
Original
|
mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
|
PDF
|
2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
|
PDF
|
BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
|
Original
|
mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
|
PDF
|
|
|
BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
|
Original
|
mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
|
PDF
|
BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
|
Original
|
mmbd1000lt1mmbd2000t1mmbd3000t1mmsd1000t1+7ot-23o-236abv218amsc1621t1msc2404bc237mpsa06 346
|
PDF
|
BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
|
PDF
|
2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
mgsf1p02elt1l218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv16422n16bc237bcy72
|
PDF
|
2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
|
PDF
|
MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
|
Original
|
automat218amsc1621t1msc2404msd1819a+15mv1620mv1624mv1636mv1640mv1642mv1644mmbf4856transistor equivalent 2n5551bf245 application notemsc162174ls04 fan out2n3819 equivalent transistormmbf5486lbf245 equivalentmps8093
|
PDF
|
2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
|
Original
|
mmbv809lt1236abmsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv16422n3819 replacement2n3053 replacementbc109c replacementmps2907 replacementbf245 replacementbc237bf245bf258 replacementj112 equivalent2n4265
|
PDF
|
MIL-STD-750 method 1037
Abstract: BC237 BF245 MPF4856
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other
|
Original
|
od-123mmsd301t1mmsd701t1mmbd301lt1+6mmbd701lt1m218amil-std-750 method 1037bc237bf245mpf4856
|
PDF
|
BC237
Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
|
Original
|
vn0300l226aamsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237fet bf245
|
PDF
|
MPS751 equivalent
Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS
|
Original
|
mps650mps651mps750mps751+122218amsc1621t1mps751 equivalentmps651 equivalent2n2222 npn transistor footprintbc237pnp for 2n3019pnp bc547 transistor2n2219 soatransistor bc107 npngeneric pnp silicon transistor 2n22222n2222 mps2222 npn transistor
|
PDF
|
