MMBFJ175LT1 Search Results

MMBFJ175LT1

Abstract: MMBF175
Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel – Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain–Gate Voltage Reverse Gate–Source Voltage Value Unit VDG 25 V VGS r –25 V 2 CASE 318–08, STYLE 10 SOT–23 (TO–236AB)

MMBFJ175LT1

Contextual Info: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max

SSs sot23

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS

6W SOT23-3

Abstract: MMBFJ175LT1 MMBFJ175LT1G
Contextual Info: MMBFJ175LT1 Preferred Device JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 V VGS r −25 V Symbol

Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P−Channel − Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain −Gate Voltage Value Unit VDG 25 V VGS r −25 V Symbol Max Unit Total Device Dissipation FR− 5 Board(1) TA = 25°C

Contextual Info: MMBFJ175LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)3.0

MMBF175

Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel – Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain–Gate Voltage Reverse Gate–Source Voltage Value Unit VDG 25 V VGS r –25 V Symbol Max Unit PD 225 mW 1.8 mW/°C

Contextual Info: MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

MMBFJ175LT1

Abstract: MMBF175
Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel — Depletion ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 V VGS r –25 V 3 1 2 THERMAL CHARACTERISTICS Characteristic

6W MARKING CODE SOT23

Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
Contextual Info: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit

MMBFJ175LT1

Contextual Info: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max

MMBFJ175

Abstract: MMBFJ175LT1G
Contextual Info: MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage