AMPLIFIER 2N5686 Search Results

2N5686 motorola

Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.

2N5684G

Abstract: 2N5686G 2N5684 2N5686
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2n5686

Abstract: 2N5685 PNP 2N5684 2N5684
Contextual Info: PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5685 . . . designed for use in high–power amplifier and switching circuit applications. 2N5686 * • High Current Capability — • • IC Continuous = 50 Amperes. DC Current Gain —

2N5684

Abstract: 2N5684G 2N5686 2N5686G
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2N5686

Abstract: 2N5684 PNP 2N5684 amplifier 2N5686
Contextual Info: ON Semiconductort PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. DC Current Gain –

2n5684

Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −

Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2N5684

Abstract: 2N5686 PNP 2N5684
Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • w IC Continuous = 50 Amperes. DC Current Gain −

2N5686 motorola

Abstract: PNP 2N5684 2N5685 2N5684 motorola 2N5686 2N5683 equivalent 2N5683 2N5684 2N5685 MOTOROLA MOTOROLA 2N5686
Contextual Info: MOTOROLA Order this document by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.

2N5683

Abstract: 2N5684 2N5685 2N5686 amplifier 2N5686 2NS685 2n5686 gain
Contextual Info: ÆàMOSPEC HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N5683 2N5684 . designed for use in high-power amplifier and switching circuit NPN 2N5685 2N5686 applications FEATURES: * Continuous Collector Current - lc = 50 A * Power Dissipation - PD = 300 W @ Tc = 25°C

BD139

Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY

AMPLIFIER 2SD718 2sb688 schematic

Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS

TIP48 NPN

Abstract: BU108 BU326 BU100 BD801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

2Sd331 npn transistor

Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

Motorola transistor 388 TO-204AA

Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

transistor MJE243 equivalent

Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

IR642

Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

bd249c equivalent

Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE

MJE34 pnp

Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

MJE172 equivalent

Abstract: mje182 equivalent BU108 B 834 Y 2SC1030 "cross reference" 2SC495 BU326 TIP3055 AS AN AMPLIFIER BU100 MJE181
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic Silicon Power Transistors MJE171* MJE172* NPN MJE181* MJE182* . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage —

2SC124

Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS