SI6953DQ Search Results

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET

Si6953DQ

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Si4947DY

Abstract: Si6953DQ Si6955DQ Si9947DY Si9953DY
Contextual Info: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8

Si6953DQ

Contextual Info: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Si6953DQ

Abstract: Si9953DY
Contextual Info: Si9953DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.25 @ VGS = -10 V "2.3 0.40 @ VGS = -4.5 V "1.5 Lower profile/smaller sizeĊsee LITE FOOTt equivalent: Si6953DQ S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3

Si6953DQ

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Contextual Info: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Si6953DQ

Contextual Info: Si6953DQ Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.17 @ VGS = -10 V "1.9 0.32 @ VGS = -4.5 V "1.3 S1 S2 TSSOPĆ8 D1 S1 S1 G1 1 2 3 D 8 Si6953DQ 4 7 6 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 PĆChannel MOSFET

Si6953DQ

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET P-Channel MOSFET

Si9400DY

Abstract: Si4947DY Si6953DQ
Contextual Info: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8

Contextual Info: SI6953DQ Transistors Matched Pair of P-Channel Enhancement MOSFETs V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)1.9 I(DM) Max. (A) Pulsed I(D)1.5 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: Si6953DQ Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate

Si4947DY

Abstract: Si6953DQ Si9400DY
Contextual Info: Si9400DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ S S SO-8 NC 1 8

Si6953DQ

Contextual Info: Si6953DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6953DQ G1 G2 Top View D1 D2 P-Channel MOSFET

SI9953dy dual mosfet

Abstract: Si4947DY Si6953DQ Si6955DQ Si9947DY Si9953DY
Contextual Info: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6953DQ or Si6955DQ

Si9947DY

Abstract: Si9953DY Si4947DY Si6953DQ Si6955DQ si6953
Contextual Info: Si9953DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.3 0.40 @ VGS = –4.5 V "1.5 Recommended upgrade: Si4947DY or Si9947DY Lower profile/smaller size see : Si6953DQ or Si6955DQ S1 S2 SO-8

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

tssop-8

Contextual Info: SINGLE & DUAL N & P CHANNEL MOSFETS µPA1800 SERIES, TSSOP-8 • DRAIN CURRENTS UP TO 13A IN SOP-8 AND TSSOP-8 PACKAGES • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 2.5V SINGLE N & P CHANNEL MOSFETS • • • The latest comprehensive data to fully support these parts is readily available.