NE68139 Search Results

NE68139

Contextual Info: NE68139 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185.0 XCJC NF 1.02 CJS VAF 15.0 VJS 0.750 Parameter time capacitance

Contextual Info: NE68139 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

84t MARKING

Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

NE68018

Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10

NE66100

Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

2SC3583

Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters