IXFB50N80Q2 Search Results

IXFB50N80Q2 Datasheets (3)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFB 50N80Q2		IXYS	TRANS MOSFET N-CH 800V 50A 3PLUS 264	Original	PDF	567.98KB	4
IXFB50N80Q2		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	567.99KB	4
IXFB50N80Q2		IXYS	HiPerFET Power MOSFET	Original	PDF	181.01KB	4

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IXYS Corporation


IXYS Corporation IXFB50N80Q2 MOSFETs 50 Amps 800V
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IXFB50N80Q2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfb50n80q2 300ns plus264 50n80q2 +11-18-10-c	PDF
IXFB50N80Q2 Abstract: 50n80 50N80Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFB50N80Q2 VDSS = ID25 = RDS on = ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 800V 50A Ω 0.15Ω 300ns PLUS264TM(IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfb50n80q2 300ns plus264tm 50n80q2 +20-11-07-a 50n80	PDF
IXFB50N80Q2 Abstract: 50n80 DS99005D 50N80Q2 Contextual Info: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfb50n80q2 300ns plus264 -55es +450n80q2 1-18-10-c 50n80 ds99005d	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
50n80 Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50n80q2 264tm 728b1 50n80 +450n8 ixfb 50n80q2 ixfb50n80q2 50n80q	PDF
IXFB Abstract: 50N80Q2 IXFB50N80Q2 50n80 Contextual Info: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	50n80q2 264tm ixfb ixfb50n80q2 +150n80	PDF
50N80Q2 Abstract: IXFB50N80Q2 264TM Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50n80q2 264tm 150imited 728b1 +1ixfb50n80q2	PDF
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	ixfd76n07-7x ixfd180n07-9x ixfd340n07-9y ixfd180n085-9x +16ixfd280n085-9y ixfd75n10-7x ixfd80n10q-8x ixfd170n10-9x ixfd230n10-9y ixfd70n15-7x ixfd21n100f-8f ixfd38n100q2-95 diode 1581 ixys ixfk21n100q ixfh40n30 ixfh40n50q ixfk38n80q2 7y 6 ixfb50n80q2 ixfn80n50	PDF
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50n80q2 264tm 728b1	PDF