IRFAE50 Search Results

IRFAE50

Abstract: SHD239506
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 7.1 4.5 200 1.2 @ 4.5 0.34 IRFAE50

Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF 244 MOSFET

Abstract: FOR G-243 G-243 International Rectifier MOSFET 443 irfae52 LF 71A diode LF 71A
Contextual Info: h e D I qassMsa c m m a t a s | Data Sheet No. PD-9.574A INTERNATIONAL R E C T I F I E R T-39-13 IN T E R N A T IO N A L R E C T IF IE R I I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAE50 IRFAE52 HEXFET TRANSISTORS N -C H A N N E L 800 Volt, 1.2 Ohm HEXFET

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

SHD218506B

Abstract: IRFAE50
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 7.1 4.5 200 1.2 @ 4.5 0.6 IRFAE50

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

1RF9540

Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

1rf740

Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

IXFM50N20

Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Contextual Info: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60

SIEMENS 800

Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80

IRF9612

Abstract: IRF9540 IRF9541 IRF9613 IRF9620 IRF9621 IRF9622
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vdg % V (V) « n Æ fê (T a= 25 ^) I gss Pd Id * /CH * /CH (A) (W) Vg s t h ) I dss min Vd s (V) max Id (nA) Í# % FD s (o n ) Vd s = Vg s te (T a= 2 5 t) b(Q n) C iss g fs C oss Crss ft JE m m Vg s =0 ( m ax ) * t y p Vg s

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

1RF640

Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Contextual Info: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)

1RF530

Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Contextual Info: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40