The Datasheet Archive

IRF640F datasheet (7)

Part Manufacturer Description Type PDF
IRF640FI STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
IRF640FI Others Shortform Datasheet & Cross References Data Scan PDF
IRF640FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistors Scan PDF
IRF640FP STMicroelectronics N - CHANNEL 200V - 0.150Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET Original PDF
IRF640FP STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A TO-220/TO-220FP MESH OVERLAY MOSFET Original PDF
IRF640FP STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A - TO-220/FP MESH OVERLAY MOSFET Original PDF
IRF640FP STMicroelectronics N - Channel 200 V - 0.150 ohm - 18 A TO-220FP MESH OVERLAY MOSFET Original PDF

IRF640F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 A 18 A TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 A 18 A TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip , IRF640F P 200 200 ± 20 18 11 72 125 1.0 5 -65 to 150 150 18(*) 11(*) 72 40 0.32 5 2000 Un it V V V A


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640FP < 0.18 < 0.18 18 A 18 A TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: IRLZ34S IRLZ44 IRLZ44N IRLZ44S IRF620 IRF620FI IRF630FI IRF640 IRF640FI IRF720 IRF720FI IRF730


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: STP16NS25FP STP17NK40ZFP STF20N20 STF20NM50D STF20N20 IRF640FP STF20NF06L STP30NS15LFP STP4NK50ZFP , STP9NK50Z STP6NK90Z STP13NK60ZFP STP17NK40ZFP IRF640FP STP13NK60ZFP STP13NK60ZFP STP16NF06FP STP11NK50ZFP STP12NM50FDFP STP30NS15LFP STP16NS25FP STF12PF06 IRF640FP STP15NK50ZFP STF24NF12 IRF640FP , STD4NK50ZT4 STD5NK50ZT4 STP14NF12FP IRF630FP IRF640FP STP16NS25FP STP5NK40ZFP STP7NK40ZFP STP11NK40ZFP , STB55NF03LT4 STB55NF06LT4 IRF630 IRF630FP IRF640 IRF640FP STP3HNK90Z STF3HNK90Z STP9NK50ZFP


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
1999 - STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STD1NB60 STP6NA80FP IRF730 complementary ste24n90
Text: IRF540FI 16 IRF530FI 10 IRF520FI 7 STP19NB20FP 10 IRF640FP 18 IRF630FP 9 STP10NB20FP 6 , IRF640FI IRF630FI IRF740FI - STP10NA40FI STP8NA40FI - IRF730FI STP7NA40FI IRF720FI - STP4NA40FI


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PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STD1NB60 STP6NA80FP IRF730 complementary ste24n90
2000 - Complementary MOSFETs buz11

Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
Text: 10V (typ) (A) IRF540FI IRF530FI IRF520FI STP19NB20FP IRF640FP STP10NB20FP IRF630FP IRF620FP


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PDF STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
RF640

Abstract: IRF 640
Text: *57 TY PE S G S -T H O M S O N !LiO T® iQ (£I i r F 640 IR F 6 4 0 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS(on) Id IRF640 IRF640FI 200 V 200 V < 0.18 £2 < 0 .1 8 a 18 A 10 A . . TYPICAL RDs(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLI CATI ONS . . HIGH CURRENT, HIGH SPEED , IRF640FI 200 V V V 10 6 72 40 0.32 2000 -6 5 to 150 150 A A A W Uni t V ds D ra in -s o u rc e V o


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PDF IRF640 IRF640FI IRF640FI RF640 IRF 640
fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
Text: IRF630S IRF630STR IRF640 IRF640FI IRF640L IRF640S IRF644 IRF644S IRF720 IRF7201 IRF720FI


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a IRFZ30 2SK790
ste30na50-DK

Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STY16NA90 STW26N25 stp20n10l STW75N06 BUZ10
Text: STW26N25 STB15N25 STP15N25 STP6N25 STD4N25 STE110NA20 STY60NA20 STW33N20 IRF640FI IRF640 STB18N20


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PDF OT-82 OT-223 220TM O-220 MAX220TM 218TM O-247 MAX247TM Max247 Max220 ste30na50-DK ste30na50 ste38na50 STP15N25 STE30NA50-DA STY16NA90 STW26N25 stp20n10l STW75N06 BUZ10
1998 - std2n52

Abstract: stp2na60 SSH6N80 buz102 equivalent rfp60n06 replacement for IRL2203N BUZ91 equivalent IRFP460 cross reference RFP60N06LE buz91a equivalent
Text: IRF632 IRF640 IRF640FI IRF640S SGS-THOMSON replacement SGS-THOMSON nearest preferred


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 SSH6N80 buz102 equivalent rfp60n06 replacement for IRL2203N BUZ91 equivalent IRFP460 cross reference RFP60N06LE buz91a equivalent
2005 - STF12PF06

Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STS8C5H30L STW10NK80Z stw9nk70z
Text: 0.125 STF20N20 18 28 0.18 IRF640FP 18 55 0.4 IRF630FP 9 31 250


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PDF STE70NM50 STY60NM50 Max247 STW45NM50FD O-247 STE48NM50 STW45NM50 STW26NM50 STF12PF06 STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STS8C5H30L STW10NK80Z stw9nk70z
1998 - std2n52

Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STD2NB60 STP60NE06-16 STP3N60FI STD12NE06 TO-220
Text: STW33N20 IRF640 IRF640FI STB19NB20 STP19NB20 STP19NB20FP IRF630 IRF630FI STD7NB20 STP10NB20


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PDF OT-82 OT-223 O-220 220TM O-220FP MAX220TM 218TM O-247 MAX247TM STB80NE03L-06 std2n52 stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STD2NB60 STP60NE06-16 STP3N60FI STD12NE06 TO-220
IRF640FI

Abstract: GC525
Text: ¿57 SGS-THOMSON IRF640 IRF640FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss RDS(on) Id IRF640 IRF640FI 200 V 200 V < 0.18 a <0.18 0. 18 A 10 A . TYPICAL RDs(on) = 0.145 Q. . AVALANCHE RUGGED TECHNOLOGY ■100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING . UNINTERRUPTIBLE POWER SUPPLY (UPS) . MOTOR CONTROL, AUDIO AMPLIFIERS . , IRF640FI Vos Drain-source Voltage (Vgs = 0) 200 V Vdgr Drain- gâte Voltage (Rgs = 20 k£2) 200 V Vgs


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PDF IRF640 IRF640FI O-220 ISOWATT220 IRF640FI IRF640/FI ISOWATT22Q GC525
IRF 260 N

Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
Text: SGS-THOMSON ELiOT@KS IRF IRF 640 /FI 641/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI IRF641 IRF641FI V dss R D S (on) Id 18 A 10 A 18 A 10 A 200 V 200 V 150 V 150 V 0.18 n 0.18 n 0.18 a 0.18 n . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC TO-220 ISOW ATT220 APPLICATIONS . . . HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE


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PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n
1996 - STE30NA50-DK

Abstract: ISOWATT-220 to220 STE30NA50 transistors irf640 ste38na50 STE30NA50-da ISOWATT220 STB30N10 STP5NA90FI
Text: STY60NA20 STW33N20 IRF640FI IRF640 STB18N20 IRF630FI IRF630 ID cont (A) 27.00 20.00 20.00 14.60 14.00


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PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 STE30NA50 transistors irf640 ste38na50 STE30NA50-da ISOWATT220 STB30N10 STP5NA90FI
2000 - irf840 power supply

Abstract: STP3020L STP38NF06L STP6NB90FP STN1NB80 STe30na50 STP4NB90 IRF740 STD1NB60 sT55n
Text: STP16NE06FP STP16NF06LFP IRF540FI IRF530FI IRF520FI STP19NB20FP IRF640FP STP10NB20FP IRF630FP , 2 5 4.5 1.8 Recycled Chlorine Free Paper http://www.st.com STP16NE06LFP IRF640FI


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PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STN1NB80 STe30na50 STP4NB90 IRF740 STD1NB60 sT55n
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 Electrical , so Ob - ro P s) t( IRF640 - IRF640FP 1 Electrical ratings Electrical ratings


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
1999 - IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: IRF620 IRF620FI IRF630FI IRF640 IRF640FI IRF720 IRF720FI IRF730 IRF730FI IRF740FI IRF740S


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PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
2006 - IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 , IRF640FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: IRF630FI IRF630FI STP4NA40FI STP3NA50FI STP3NA60FI STP3NA90FI IRF540FI IRF640FI IRF620FI , IRF621 IRF622 IRF623 IRF624 IRF630 IRF630FI IRF630S IRF631 IRF632 IRF640 IRF640FI IRF640S , IRF620 STP4N20 IRF620 STP6N25 IRF630 IRF630FI IRF630 IRF630 IRF620 IRF640 IRF640FI STB18N20 , STP2N80 STP4NA80 STP4NA90 STP3NA100 IRF520FI IRF530FI IRF540FI IRF620FI IRF630FI IRF640FI , IRF540FI IRF540FI IRF620FI IRF620FI STP5N30FI IRF630FI IRF630FI IRF640FI IRF640FI STP4NA40FI


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Not Available

Abstract: No abstract text available
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S (o n ) Id < 0.1 8 Q. < 0.1 8 Q. 18 A 18 A . TYPICAL Ros(on) =0.1 50 £1 . EXTREMELY H IG H dV /dt CAPABILITY . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP
1996 - IRF640

Abstract: IRF640FI IRF640 morocco
Text: IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s R DS( on) ID 200 V 200 V IRF640 IRF640FI < 0.18 < 0.18 18 A 10 A TYPICAL RDS(on) = 0.145 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s , IRF640FI Drain-source Voltage (V GS = 0) 200 V Drain- gate Voltage (R GS = 20 k) 200 V


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PDF IRF640 IRF640FI 100oC O-220 ISOWATT220 IRF640 IRF640FI IRF640 morocco
irf640

Abstract: IRF640FI
Text: SCS-THOMSON IRF640 IRF640FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vdss R DS(on) Id IRF640 IRF640FI 200 V 200 V < 0 .18 Q. <0 .18 Q. 18 A 10 A . TYPICAL RDS(on) = 0.145 Q. . AVALANCHE RUGGED TECHNOLOGY . 1 00% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 1 00°C APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING . UNINTERRUPTIBLE POWER SUPPLY (UPS) . MOTOR CONTROL, AUDIO , RATINGS Symbol Parameter Value Unit IRF640 IRF640FI Vos Drain-source Voltage (Vgs = 0) 200 V Vdgr


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PDF IRF640 IRF640FI IRF640FI O-220 ISOWATT220 IRF640/FI ISOWATT220
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