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    IRF64 Search Results

    IRF64 Datasheets (260)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF640
    Fairchild Semiconductor 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF 131.91KB 7
    IRF640
    Harris Semiconductor Power MOSFET Selection Guide Original PDF 41.91KB 1
    IRF640
    Intersil 18A, 200V, 0.180 ?, N-Channel Power MOSFETs Original PDF 62.65KB 7
    IRF640
    On Semiconductor Power Field Effect Transistor Original PDF 111.78KB 3
    IRF640
    Philips Semiconductors N-channel TrenchMOS transistor Original PDF 95.94KB 9
    IRF640
    STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220 Original PDF 14
    IRF640
    STMicroelectronics N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET Original PDF 107.85KB 9
    IRF640
    STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF 183.65KB 9
    IRF640
    STMicroelectronics N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP Original PDF 375.3KB 9
    IRF640
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF640
    FCI POWER MOSFETs Scan PDF 204.39KB 4
    IRF640
    Frederick Components Power MOSFET Selection Guide Scan PDF 204.39KB 4
    IRF640
    General Electric Power Transistor Data Book 1985 Scan PDF 129.21KB 2
    IRF640
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 205.16KB 5
    IRF640
    International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF 44.28KB 1
    IRF640
    International Rectifier HEXFET Power Mosfet Scan PDF 182KB 6
    IRF640
    Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB Scan PDF 30.12KB 1
    IRF640
    Motorola Switchmode Datasheet Scan PDF 57.06KB 1
    IRF640
    Motorola European Master Selection Guide 1986 Scan PDF 37.11KB 1
    IRF640
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.34KB 1
    ...
    SF Impression Pixel

    IRF64 Price and Stock

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    Infineon Technologies AG IRF640NPBF

    Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRF640NPBF 4,439 1
    • 1 $1.70
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    • 1000 $0.42
    • 10000 $0.36
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    Avnet Americas IRF640NPBF Bulk 1
    • 1 $2.00
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    • 1000 $0.55
    • 10000 $0.42
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    Mouser Electronics IRF640NPBF 22,905
    • 1 $2.12
    • 10 $1.09
    • 100 $0.84
    • 1000 $0.61
    • 10000 $0.49
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    Arrow Electronics () IRF640NPBF 242,058 52 Weeks 1
    • 1 $1.80
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    IRF640NPBF 18,902 52 Weeks 1,000
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    IRF640NPBF 12,647 29 Weeks 1
    • 1 $1.52
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    Newark IRF640NPBF Bulk 57,919 1
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    Ameya Holding Limited IRF640NPBF 36,555
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    Rutronik IRF640NPBF Tube 1,500 1,000
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    Chip 1 Exchange IRF640NPBF 2,730
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    EBV Elektronik IRF640NPBF 92,000 27 Weeks 1,000
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    Infineon Technologies AG IRF640NSTRLPBF

    Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
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    TME IRF640NSTRLPBF 1,441 1
    • 1 $2.02
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    Avnet Americas () IRF640NSTRLPBF Tape & Reel 12,000 39 Weeks 800
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    IRF640NSTRLPBF Ammo Pack 1
    • 1 $2.30
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    • 100 $1.09
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    • 10000 $1.00
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    Mouser Electronics IRF640NSTRLPBF 32,794
    • 1 $2.15
    • 10 $1.08
    • 100 $0.92
    • 1000 $0.64
    • 10000 $0.60
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    Arrow Electronics () IRF640NSTRLPBF 30,400 39 Weeks 800
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    IRF640NSTRLPBF Cut Strips 2,316 30 Weeks 1
    • 1 $1.81
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    • 100 $1.81
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    Newark () IRF640NSTRLPBF Cut Tape 2,120 1
    • 1 $2.34
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    • 100 $1.11
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    • 10000 $0.79
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    IRF640NSTRLPBF Tape & Reel 2,120 100
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    RS IRF640NSTRLPBF Bulk 10
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    Rochester Electronics IRF640NSTRLPBF 800 1
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    • 10000 $0.52
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    Ameya Holding Limited IRF640NSTRLPBF 194,400
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    Rutronik IRF640NSTRLPBF Tape & Reel 800 800
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    • 10000 $0.43
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    EBV Elektronik IRF640NSTRLPBF 27 Weeks 800
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    Win Source Electronics IRF640NSTRLPBF 40,020
    • 1 -
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    • 1000 $0.31
    • 10000 $0.30
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    Vishay Intertechnologies IRF640PBF

    Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRF640PBF 1,339 1
    • 1 $2.82
    • 10 $2.00
    • 100 $1.01
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    • 10000 $1.01
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    Avnet Americas IRF640PBF Bulk 7,603 20 Weeks 1
    • 1 $2.05
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    Mouser Electronics IRF640PBF 3,137
    • 1 $2.70
    • 10 $2.29
    • 100 $2.08
    • 1000 $1.71
    • 10000 $1.71
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    Arrow Electronics () IRF640PBF 1,940 20 Weeks 1
    • 1 $3.30
    • 10 $3.30
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    • 1000 $3.30
    • 10000 $3.30
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    IRF640PBF 74 1
    • 1 $2.74
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    RS IRF640PBF Bulk 2 1
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    TTI IRF640PBF Tube 13,800 100
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    Vishay Intertechnologies IRF640SPBF

    Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRF640SPBF 1,072 1
    • 1 $2.72
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    • 10000 $0.98
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    Avnet Americas IRF640SPBF Bulk 20 Weeks 1,000
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    Arrow Electronics () IRF640SPBF 3,145 20 Weeks 1
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    IRF640SPBF 1,150 20 Weeks 1
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    IRF640SPBF Tape & Reel 1,688 100
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    Vishay Intertechnologies IRF644PBF

    Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRF644PBF 468 1
    • 1 $2.22
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    IRF64 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf6442002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRF640 applications note

    Abstract: IRF640 circuit
    Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


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    irf640sihf6402002/95/eco-220ab+42011/65/eu12-mar-12irf640 applications noteirf640 circuit PDF

    IRF646

    Abstract: TB334
    Contextual Info: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    irf646ta17423tb334 PDF

    Contextual Info: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039


    Original
    irf644pbfo-220ab12-mar-07 PDF

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


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    irf640irf640fpo-220/fpirf640f+4o-220irf64irf640 p channel mosfetirf640 morocco PDF

    Contextual Info: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040


    Original
    irf644spbf08-mar-07 PDF

    Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original
    94107birf644nirf644nsirf644nl+108-mar-07 PDF

    Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf644b/irfs644bo-220fp001o-220f+1irfs644b PDF

    MOSFET 640N

    Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
    Contextual Info: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original
    irf640n/irf640ns/irf640nlo-263o-262o-220+6100ocmosfet 640nirf640nsirf640* spiceirf640ncircuit using irf640n PDF

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original
    irf644s PDF

    TB334

    Abstract: IRF646
    Contextual Info: IRF646 Data Sheet Title F64 bt A, 5V, 80 m, Cha el wer OST utho June 1999 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    irf646tb334 PDF

    UC60

    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF643 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    o-220abirf643uc60 PDF

    irf6401

    Abstract: IRF640R IRF642R 640r IFIF643R IRF641R IRF643R
    Contextual Info: Rugged Power M OSFETs_ IRF640R, IRF641R, IRF642R, IRF643R File Num ber 2010 Avalanche Energy Rated N-Channel Power MOSFETs 1 6 A a n d rDs on N -C H A N N E L E N H A N C E M E N T M O D E 18A , 2 0 0 V , 1 5 0 V = 0 .1 8 0 a n d 0 .2 2 0


    OCR Scan
    irf640rirf641rirf642rirf643r+592cs-42658ifif643rf640rirf6401640r PDF

    Contextual Info: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    irf640/641irf640irf641 PDF

    irf640

    Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
    Contextual Info: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original
    irf640sirf640lsihf640ssihf640l+8o-263o-26218-jul-08irf6405d surface mount diodesihf640s-e3power mosfet irf640irf640spbf PDF

    IRF644PBF

    Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


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    irf644sihf644o-22018-jul-08+3irf644pbfsihf644-e3diode 330 PDF

    IRF640PBF

    Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
    Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


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    irf640sihf640o-22050lectual+518-jul-08irf640pbflinear applications of power mosfet irf640irf640 vishaysihf640-e3 PDF

    IRF640B

    Abstract: irfs640b IRF series
    Contextual Info: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf640b/irfs640birf640birfs640birf series PDF

    IRF644B

    Abstract: IRFS644B IRF series mosfet irf 150
    Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf644b/irfs644bo-220irf644birfs644b+2irf seriesmosfet irf 150 PDF

    IRF640

    Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
    Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


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    irf640irf640fpo-220/to-220fpo-220+6o-220fpst irf640irf640 circuitjesd97power mosfet irf640 fpirf640 morocco PDF

    IRF640

    Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
    Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


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    irf640irf640fpo-220/to-220fpo-220+6o-220fpirf640 applications notecircuit using irf640power mosfet irf640irf640 mosfetjesd97 PDF

    IRF644A

    Contextual Info: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan
    irf644a PDF

    IRF644N

    Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3
    Contextual Info: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature


    Original
    irf644nirf644nsirf644nlsihf644n+8sihf644nssihf644nlo-262o-220o-26318-jul-08sihf644n-e3sihf644ns-e3 PDF

    Contextual Info: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21


    Original
    irf644ssihf644so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF