BUX16B Search Results

BUX16

Abstract: voltage regulators 300v dc BUX16/A BUX16A BUX16B BUX16C
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation

BUX16

Abstract: BUX16A BUX16B BUX16C BUX18C BUX168 RCA-BUX16-serles equivalent of SL 100 NPN Transistor
Contextual Info: TTT'SGUÏD STATE 3875081 — - Ô T " W ^ 3 f i ? S D â l G E S O L I D S T AT E 01E 3 0 0 1 7 b D M 17604 D , - /j Pro Electron Power Transistors • File Number '800 BUX16, BUX16A, BUX16B, BUX16C

Contextual Info: T -3 3 ' fò Power Transistors BUX16, BUX16A, BUX16B, BUX16C HARRIS S E M I C O N D S E C T O R 800 File Number 27E 3> • 4 3 0 5 2 7 1 0 0 2 0 2 3 M "J « H A S High-Voltage, High-Power Silicon N-P-N Power Transistor Fo r S w itching and Linear A p p lica tio n s in

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SC558

Abstract: 2SC558 c UJ35 2SC901A mje51t
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, SOT4901 SOT4921 KSP1051 KSP1071 KSP1091 SOT4941 UPT522 MJ410 TIP525 TIP525 i:~~~~ 15 20 TIP526 TIP526 SOT1628 SOT1628 SOT1658 SOT1658 SOT1638 SOT1638 ~gi~~~g 25 30 SOT1011 2N5239 SOT4902 SOT4922 KSP1052

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N5101

Abstract: BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent BUY22 BUT51P BUX23 BUT13P
Contextual Info: STI Type: 2N5050 Notes: Polarity: NPN Power Dissipation: 40 VCBO: 125 VCER: 125 ICBO: 125 ICBO ua: 500 hFE: 25 hFE A: 1.0 VCE: 1.0 VBE: 1.2 IC A: .75 COB: 250 fT: 10 Case Style: TO-213AA/TO-66 Industry Type: 2N5050 STI Type: 2N5052 Notes: *BVCEO Polarity: NPN

BDX334

Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Contextual Info: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A

2SC901A

Abstract: BUS21 BUW41
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r (CE)sat 'CBO Max hFE «T ON) Min (Hz) Max (A) Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 -10 . . -15 . . . 20

RCA1E02

Abstract: 40327 RCA1A15 bu 25200 BUX67B
Contextual Info: w a rn High-Voltage n-p-n and p-n-p Type Selection Charts V CEO *sus V C EX^SUS^ V V •c A V CE V Temp.—°C 25 2N3439 F A M ILY n-p-n) High Voltage, Complementary to 2N5415 Family f yI = 15 M H z min; P y1 = 10 W max 40346 2N34402N4064403902N34392N406340385A U D IO T Y P E S

RCA1E02

Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Contextual Info: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«

2n5415 complementary

Abstract: BFT19B 2N5239 2N5240 2N5838 2N5840 BD550B BUX16 BUX16A BUX16B
Contextual Info: TH O n S O N / D I S T R I B U T O R SflE D • “ia5t.a73 O O O S T E T ATT m TCSK - Bipolar Power Transistors High-Voltage Continued V cE(*at)-V *>FE v C E O (su s ) VCEV(SUS) V Type No. V 2N5240 FA M ILY (n-p-n) BUX16 BD550B 2N5239 2N5838 BUX16A 2N5839

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

B0411

Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864