BD647 Search Results

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

bd648

Abstract: bd652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

BD647

Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

BD646

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

b0652

Abstract: BD648 BD652 bd650
Contextual Info: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature

transistor bd650

Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649
Contextual Info: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current

B0647

Abstract: B0645 bd649 TAG 064
Contextual Info: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

BD648

Abstract: transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647

BD645

Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

transistor bd647

Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

transistor bd650

Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BD648

Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA

BDX334

Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Contextual Info: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A

BD648

Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

BD652

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

652f

Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F
Contextual Info: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.