2N406 Search Results

2N4058

Abstract: A5T4058 A8T4061 a5t37 IR 4062 2n4062
Contextual Info: TYPES 2N4058 THRU 2N4062, A5T4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 2 . M A R C H 1973 S IL E C T t TR A N SISTO R S* • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

2N4058

Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '

2N4061

Contextual Info: 2N4061 360mW PNP silicon general purpose AF transistor 3.74 Transisto. 1 of 1 Home Part Number: 2N4061 Online Store 2N4061 Diodes 3 6 0 m W PNP silic o n general purpo se AF trans is t o r Transistors

2N4058

Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
Contextual Info: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

2n4058

Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

to 106 2n5133

Abstract: 2SA564A 2N4288 2N5133 2N4248 2N4290 2SA564 2SA640 2N4249 2N4250
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY VCEO Pd IC mW (mA) (V) min max fT Cob N.F. max max IC VCE max IC min (mA) (V) (V) (mA) (MHz) (MHi) (dB) 2N4061 2N4062 2N4248 2N4249 2N4250 P P P P P TO-92B TO-92B TO-106 TO-106 TO-106 360

2N4058

Contextual Info: 2N4058 2N4061 2N4059 2N4062 2N4060 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4058 series devices are silicon PNP transistors designed for low level, low noise 2N4058 , low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications.

2N4143

Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122

40412V1

Contextual Info: J.EIIE.U , line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3439; 2N3440; 2N4063; 2N4064; 40385; 40346, V1, V2; 40390; 40412, V1, V2 High-Voltage Silicon N-P-N Transistors MAXIMUM RATINGS, Absolute M,imum Vtluts:

Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4 0 6 2 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I •¡Hi THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

2N4064

Abstract: 2N4063 2N3440 TA-2470 2N3439 2N3439 IR 2N3440 HARRIS ta2458
Contextual Info: P ow er Transistors File N um b er 64 HARRIS SEMICOND SECTOR 2N3439, 2N3440, 2N4063, 2N4064 57E D • 4302271 O G IT ? ^ Ö «HAS. TERMINAL DESIGNATIONS H igh-V oltage Silicon N -P -N Planar Transistors F or H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

2SA495

Abstract: 2N4288 2N5133 2SA640 2N4291 2N4248 2SA564 2N4249 2SA545 2SA561
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ CASE RITY Pd IC VCEO mW (mA) (V) min fT Cob N.F. IC min max max VCE(sat) HFE MAXIMUM RATINGS max IC VCE max (mA) (V) (V) (mA) (MHz) (MHi) (dB) _ 2N4061 2N4062 2N4248 2N4249 2N4250 P P P P P TO-92B

2N4121

Abstract: 2N5855 2N4916 case to106 N5040 2N3639 2N4355 2N4917 2N5383 2N3640
Contextual Info: PNP EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. TYPE NO. Vcb VCE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122 30 30 30 40 40 30 30 30 . 40 40 6 6 6 5 5 45 90 180 70 150 _ "— 200 300 1 1 1 10 10 5 5 5 1 1 0.3 0.4 5 5 2N4125

2N5041

Abstract: 2N4228 2N4122 2N4121 2N3639 2N5383 2N4355 2N4917 2N5139 2N5143
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

pnp 2N3906 beta

Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION

silect

Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV