2N1674
Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+14bsw652n15722n7382n25172n7552n1674emihus2n1605abc4472n17242n28912n1666bsw392n1664
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3SM diode
Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7553sm diode2n22432n2222b2n22442n22822n22502n23162n22492n2303 sot-232n2306
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2N1893 motorola
Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7552n1893 motorolabsw322n17642n1742bc447mpsh042n18412n19562n1821bsw39
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BSW39
Abstract: lamb
Contextual Info: BSW39 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Pianar Switching Transistor Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and sw itches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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2N2875
Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+15bsw652n15722n7382n25172n7552n28752n28362n27822n27732n28692n2840 rca2n27502n27682n1893 motorola2n2857 semicoa
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BSW65
Abstract: ST4341 2N2243AL BSW32 2N2364 LOW-POWER SILICON NPN 2N2891 BCX31 BSW39 2n738
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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mps5858bfr50tipp31bst4341+12bsw652n15722n7382n25172n7552n2243albsw322n2364low-power silicon npn2n2891bcx31bsw39
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MHT5002
Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110usaf520es070m2n150850m5a+1413on032on0600di2n1509mht5002st 2n3053d28a9d11c211b20dc5501dc6112bmd20mm4645mt75bfs86
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BFY41
Abstract: BFY33 BFX68 BFY46 bsv82 BFY67 bfx74a BFY64 BFX29 BFX30
Contextual Info: Medium Power Amplifiers and Switches P O L A R IT Y BFX2 9 B FX3 0 BFX3 5 BFX3 8 BFX3 9 P P P P P TO-39 TO-39 TO-18 TO-39 TO-39 600 600 360 800 800 0.6 0.6 _ 1 1 60 65 40 55 55 50 50 80 85 40 BFX4 0 BFX41 BFX6 8 BFX6 9 BFX 6 9 A P P N N N TO-39 TO-39 TO-39
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BSY86
Abstract: BSW65 BSY90 bsv82 BSW61 BSY87 BFY94 BSW39 BFY68 BFY67
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY M A XIM UM RATINGS CASE H FE Pd IC VCEO mW (A) (V) min 40 100 40 40 300+ VCE(sat) IT Cob COM PLE IC VCE max min max M ENTARY max ("«A) (V) (V) (A) (M Hz) (PF) TYPE 120 300 150 - 150 150 150 0.1
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2SC102 transistor
Abstract: transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110usaf520es070m2n150850m5a+1413on032on0600di2n15092sc102 transistortransistor 2sc1022sc1021763-0625mm4647usaf521es071m10msa2sc5192sc520tk30557
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st25a
Abstract: ST25C transistor 2N905 2N904 2N906 ST25A transistor TRANSISTOR st25a ST25C 2SC182 TRANSISTORS 132 GD
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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usaf520es070m2n150850m5a13on0+1332on0600di2n1509st25ast25c transistor2n9052n9042n906st25a transistortransistor st25ast25c2sc182transistors 132 gd
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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SDT1000
Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110usaf520es070m2n150850m5a+1413on032on0600di2n1509sdt1000mt1888st542n16dt6104stc10941205tmht8012usaf520es070usaf521es071
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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BFX97A
Abstract: BFY34
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS VcEO P4 Ic mW (A) (V) H,'E POLA RITY CASE BFX69 BFX69A BFX74 BFX74A BFX84 N N P P N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 600 800 800 l 30 40 35 60 60 40 40 30 30 30 BFX85 BFX86 BFX87 BFX88 BFX94 N N
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oms 450
Abstract: BLY26 2n1608 BLY25 CP430 B3547 usaf520es070 usaf521es071
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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t056
Abstract: RE3797 2SA327 B5022 bly89 ST54
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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an-6671g40002n3773 power amplifier circuit diagramsscr handbook, rca+8hc2000hrca transistor npn a13b0241cnpn transistor rca 46740659triac t6440mrca t2850ddiac d3202u
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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