95 SOT223 Search Results

LC1210

Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
Contextual Info: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-One、IMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS

Contextual Info: bb53T31 0025751 20b « A P X BZV90 SERIES b?E D N AI1ER PHILIPS/DISCRETE _ J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT223 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

6 amp SCR

Abstract: FS02
Contextual Info: FS02.N SURFACE MOUNT SCR SOT223 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general

FZT558

Abstract: DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

FZT558

Abstract: pnp high emitter base voltage 15 volt PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT ZTX558 DSA003710
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 IS S U E 2 - D E C E M B E R 1995_ FEATURES * * 400 Volt V CE0 200 m A continuous current * Ptot= 2 W a t t - - - C w jK T P A R T M A R K IN G D ET A IL -

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

FS01

Contextual Info: FS01.N SURFACE MOUNT SCR SOT223 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifiers uses a high performance PNPN technology. These parts are intended for general

Contextual Info: FT01.N LOGIC LEVEL TRIAC SOT223 Plastic Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 Gate Trigger Current < 10 mA On-State Current 1 Amp G This series of TRIACs uses a high performance PNPN technology. MT2 G These parts are intended for general purpose AC switching applications with

Triac FT01

Abstract: FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current FT01, triac Fagor triacs triac ft01 07 Data Sheet Triac FT01 Triac FT01 09 FT01
Contextual Info: FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current Gate Trigger Current 1 Amp < 3 mA to < 25 mA Off-State Voltage MT2 200 V ÷ 400 V (02, 03) 200 V ÷ 600 V (04, 05, 07, 09, 10) MT1 MT2 The FT01 series of TRIACs uses a high performance PNPN technology.

Triac FT01

Abstract: ft01 Triac FT01 09 Data Sheet Triac FT01 FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current power triac
Contextual Info: FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current Gate Trigger Current 1 Amp < 3 mA to < 25 mA Off-State Voltage MT2 200 V ÷ 400 V (02, 03, 05) 200 V ÷ 600 V (07, 09, 10) MT1 MT2 The FT01 series of TRIACs uses a high performance PNPN technology.

FZT751

Abstract: FZT751Q FZT751QTA sot223 transistor pinout
Contextual Info: A Product Line of Diodes Incorporated Green FZT751 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features • • • • • • • Mechanical Data • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

FZT789AQTA

Abstract: FZT789A-PNP fzt 655 FZT789A
Contextual Info: A Product Line of Diodes Incorporated Green FZT789A PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -25V Maximum continuous current IC cont = -3A Very Low Saturation Voltage

ZXTN

Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Contextual Info: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating

Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •          BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

fzt591a

Contextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A

FZT489QTA

Abstract: MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated Green FZT489 30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 30V Max Continuous Current IC = 1A Low Saturation Voltage Complementary PNP Type: FZT589

Contextual Info: A Product Line of Diodes Incorporated Green FZT491A NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 40V Max Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

FZT956

Contextual Info: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current

Contextual Info: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium

BFU590G

Contextual Info: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium

FZT651

Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

DXT2011

Abstract: DXT2011P5 DXT2011P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADVANCE INFORMATION 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT5551P5-13

Abstract: DXT5551 DXT5551P5
Contextual Info: A Product Line of Diodes Incorporated DXT5551P5 ADVANCE INFORMATION 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 2.25W