95 SOT223 Search Results

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

LC1210

Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
Contextual Info: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-One、IMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS

Contextual Info: bb53T31 0025751 20b « A P X BZV90 SERIES b?E D N AI1ER PHILIPS/DISCRETE _ J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT223 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

6 amp SCR

Abstract: FS02
Contextual Info: FS02.N SURFACE MOUNT SCR SOT223 Plastic On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general

FZT558

Abstract: DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

FZT558

Abstract: pnp high emitter base voltage 15 volt PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT ZTX558 DSA003710
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

Contextual Info: DZT5551 160V NPN VOLTAGE TRANSISTOR IN SOT223 Features • • • • • • • • • Mechanical Data BVCEO > 160V BVEBO > 6V IC = 600mA Continuous Collector Current Low Saturation Voltage 150mV max @10mA hFE specified up to 50mA for a high gain hold up

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 IS S U E 2 - D E C E M B E R 1995_ FEATURES * * 400 Volt V CE0 200 m A continuous current * Ptot= 2 W a t t - - - C w jK T P A R T M A R K IN G D ET A IL -

Contextual Info: PNP SILICON PLANAR M ED IU M POWER HIGH GAIN TRANSISTOR FZ T 1 151A - ISSUE 1 - JANUARY 1997_ FEATURES * V c e o =-40V * 3 A m p C ontinuous Current * 5 A m p Pulse Current * * Lo w saturation Voltage High Gain SOT223

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

FT0110

Contextual Info: FT0110.N STANDARD TRIAC SOT223 Plastic On-State Current Gate Trigger Current 1 Amp £ 25 mA Off-State Voltage 200 V ÷ 800 V MT2 MT1 MT2 G This series of TRIACs uses a high perfor mance PNPN technology. These parts are intended for general purpose AC switching applications

FS01

Contextual Info: FS01.N SURFACE MOUNT SCR SOT223 Plastic On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifiers uses a high performance PNPN technology. These parts are intended for general

Contextual Info: FT01.N LOGIC LEVEL TRIAC SOT223 Plastic Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 Gate Trigger Current < 10 mA On-State Current 1 Amp G This series of TRIACs uses a high performance PNPN technology. MT2 G These parts are intended for general purpose AC switching applications with

Triac FT01

Abstract: FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current FT01, triac Fagor triacs triac ft01 07 Data Sheet Triac FT01 Triac FT01 09 FT01
Contextual Info: FT01.N SURFACE MOUNT TRIAC SOT223 Plastic On-State Current Gate Trigger Current 1 Amp < 3 mA to < 25 mA Off-State Voltage MT2 200 V ÷ 400 V (02, 03) 200 V ÷ 600 V (04, 05, 07, 09, 10) MT1 MT2 The FT01 series of TRIACs uses a high performance PNPN technology.

FT01

Contextual Info: FT01.N LOGIC LEVEL TRIAC SOT223 Plastic Gate Trigger Current < 10 mA On-State Current 1 Amp Off-State Voltage 200 V ÷ 800 V (07, 09) MT2 200 V ÷ 600 V (02, 03, 04, 05) MT1 MT2 G This series of TRIACs uses a high perfor mance PNPN technology. These parts are intended for general

FZT751

Abstract: FZT751Q FZT751QTA sot223 transistor pinout
Contextual Info: A Product Line of Diodes Incorporated Green FZT751 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features • • • • • • • Mechanical Data • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage

FZT789AQTA

Abstract: FZT789A-PNP fzt 655 FZT789A
Contextual Info: A Product Line of Diodes Incorporated Green FZT789A PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -25V Maximum continuous current IC cont = -3A Very Low Saturation Voltage

ZXTN

Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Contextual Info: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating

LDO1117

Abstract: ZLDO1117G ZLDO1117QGTA ZLDO1117QG12TA ZLDO1117 ZLDO1117QK18TC
Contextual Info: A Product Line of Diodes Incorporated ZLDO1117 1A LOW DROPOUT POSITIVE REGULATOR 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V AND ADJUSTABLE OUTPUTS Description Pin Assignments ZLDO1117 is a low dropout positive adjustable or fixed-mode SOT223 regulator with 1A output current capability.

Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •          BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

fzt591a

Contextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A

FZT489QTA

Abstract: MARKING fzt
Contextual Info: A Product Line of Diodes Incorporated Green FZT489 30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 30V Max Continuous Current IC = 1A Low Saturation Voltage Complementary PNP Type: FZT589

Contextual Info: A Product Line of Diodes Incorporated Green FZT491A NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 40V Max Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A

FZT956

Contextual Info: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current