2SB73 Search Results

Contextual Info: Product specification 2SB736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Complementary to 2SD780. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SD809

Abstract: 2SB731 H150 B731
Contextual Info: 2SB731 /2 S D 8 0 9 1 2SB731 2SD809(1 ) P N P /N P N i t ’ 9 P N P /N P N Silicon Epitaxial T ransistor Audio Frequency Power A m plifier '> i) = ! > t = 7 ' ^ ' > 7 . 9 Low Speed S w itching ffijs » m ti mm ts * y y y ’ Vy'i y\ o i- j'F f'f- /, ') u -

b0416

Abstract: TO-202AC
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2sb739

Contextual Info: 2SB738,2SB739 Silicon PNP Epitaxial HITACHI Application • L o w frequency power a m p lifie r • Complementary pair with 2SD 787 and 2SD 788 Outline TO-92M OD 1. Emitter 2. Collector 3. Base ; 3 2 : 1 2SB738, 2SB739 Absolute Maximum Ratings Ta = 25°C

2SB739

Abstract: 2SB739CTZ-E 2SD787 2SD788 PRSS0003DC-A
Contextual Info: 2SB739 Silicon PNP Epitaxial REJ03G0650-0200 Previous ADE-208-1030 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SB737

Abstract: 2SD786 transistor 2Sb737 transistor 2SD786 2SD-786E 2SB737 rohm
Contextual Info: 2SB737 /I ransistors 2 S B 7 3 7 i t o2 * ' > 7 ^ 7 ° b - : H f é P N P '> '; = ! > ig; rbb' f ig lia /Low rbb' Low Noise Amp. Epitaxial Planar PNP Silicon Transistor • W f^ jilH /'D im e n s io n s Unit : mm • # * 1 ) im ^ T ‘ ib Z ( ® R gT f ê î S ^ ) o

2SB736

Contextual Info: NEC EITCTRON DEVICE / / SILICON TRANSISTORS ^ « 2SB736,2SB736A A U D IO FREQ U EN C Y PO W ER A M P L IF IE R P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S I O N S T h e 2 S B 7 3 6 , 2 S B 7 3 6 A are designed for use in small type equipm ents espe­

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

Contextual Info: 2SD788 Silicon NPN Epitaxial REJ03G0771-0200 Previous ADE-208-1139 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SB739

Abstract: Hitachi DSA002754 2SB738
Contextual Info: 2SB738, 2SB739 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline 2SB738, 2SB739 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO –20

EBO1

Abstract: Hitachi DSA002756 2SD788
Contextual Info: 2SD787, 2SD788 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB738 and 2SB739 Outline 2SD787, 2SD788 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD787 2SD788 Unit Collector to base voltage VCBO 20 20

transistor et 454

Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
Contextual Info: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )

736a

Abstract: stt5 117 ajg JE 170 JE 33 t1is 2SB736 2SB736A T108 T540
Contextual Info: •3— S 7 • £/— h- NEC Silicon Transistors iïf/ x fx # 2 S B 7 3 6 ,7 3 6 A W i t # o h FE^ ' * v \ O2SD780, ! m m hFE : 2 0 0 T Y P . ( V CE = —1 .0 V, Ic = —50 mA) 2SD 780At 3 > r i J / ( T a = m 25 iJT i-o °C ) S Bg- § f§ 2SB736 2SB736A

2SB73

Abstract: 2SB739 2SB738 2SB73R 2SD787 2SD788
Contextual Info: HITACHI 2SB738, 2SB739 S IL IC O N P N P E P IT A X IA L L O W F R E Q U E N C Y P O W E R A M P L IF IE R Complementary pair with 2SD 787 and 2SD 788 3CJ 1. E m illrr 2. C ollecior 3. Base DimcrtsiOrtS ìli m m (JE D E C TO-92 MOD.) I ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SB737

Abstract: 2SD786 F10H njc5 2Sb737 transistor
Contextual Info: h ~ 7 > y Z $ /'Transistors O Q R 7 ^ 7 f c w O • W m 2SB737 PNP h-7>v^^ Epitaxial Planar PNP Silicon Transistor rbb 'H & ltE a iB liffl/L ow rbb' Low Noise Amp. • ftft • ^ J fi^ jiE g /D im e n s io n s Unit : mm 1) (® R g T 'i& ii^ ) o N F =2.5dB (Typ.)

Contextual Info: HITACHI 2SB738, 2SB739 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD787 and 2SD788 ~n— T~m 1 Emitter 2 C o H e c io f B ase fîimçrvsiDris in m m (JEDEC TO-92 MOD.) • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) llcm Symbol;

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SD780

Abstract: 1DW transistor TRANSISTOR 1dw
Contextual Info: 2 S D 7 8 0 ,2 S D 7 8 0 R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2SB736,2SB736R PACKAGE DIMENSIONS • High DC Current Gain: h FE = 200 TYP. <VCE = 1.0V, l c =50mA in m illim e te rs inches) 2 5 81 (0 098J

2SB731

Abstract: 2SD809
Contextual Info: SavantIC Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage · APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING

3e tRANSISTOR

Abstract: SD773 IC 4511 2SB733 RX 3E sasm 8511 F108 T108 T460 SE 135 N
Contextual Info: SEC j iif n f x S ilic o n T r a n s i s t o r A 2SB733 P N P x t i U 3 > 7*9 h PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^ ^ 7 i - f ? — K 7 4 7", K 7 *i U n it : m m t I t f l t ' t o w.i±~c-fa o É riH * * ''± è <, a h FET ''L * ^ ^ J '^

2SB733

Abstract: 2SD773 transistor 2sb733
Contextual Info: NEC DESCRIPTION PIMP SILICON TRANSISTOR 2SB733 The 2SB733 is designed fo r use in driver and outp u t stages of audio frequency amplifiers. PACKAGE DIMENSIONS in m illim e te rs inches FEATURES • High Total Power Dissipation • High D.C. Current Gain

B52 transistor

Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe­ in millimeters