74S30 Search Results

TTL LS 7406

Abstract: el 7406 74l804 ls 7404 7404 ls 74114 ic 74132 IC 7404 IC TTL 7402 TTL IC 7405
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL D7 54/7430, 54H/74H30 54S/74S30, 54LS/74LS30 Vcc NC r r r NC r D8 54S/74S133, 54LS/74LS133 Vcc NC r fi fi Ili ill HI Li Lil lil GND LzJ R R R R F IR R F I Vcc E RRRRRRRFl LiJ ikj Lil l±J UJ LsJ IzJ GND LU D11

74LS30PC

Abstract: 74LS30 74LS30P 7430DC
Contextual Info: 30 CO NNECTIO N DIAGRAMS PINO UT A 54/7430 o/ô //7 54H/74H30 ò /q /s o W54S/74S30/ , \/54LS/74LS30 O Vcc d 8-INPUT NAND GATE E E E m Œ ]Ö ]N C [7 I] 1 3 ]n C 13 U gnd ORDERING CODE: See Section 9 PIN PKGS OUT CO M M ERCIAL GRADE MILITARY GRADE Vcc = +5.0 V ±5%,

S201

Abstract: S301 D2007 SN74S201 SN74S301 7b26 A5GND 7b26b S30-1
Contextual Info: S N 7 4S 2 01 , S N 74S301 25 6 BIT HIGH PERFORMANCE RANDOM ACCESS MEMORIES D 2 0 0 7 , SEPTEM BER 1 9 7 7 — FEBRUARY 1 9 8 4 S T A T IC R A N D O M -A C C ES S M EM O RIES Static Fully Decoded R A M 's Organized as 2 5 6 W ords o f One Bit Each • TO P V IE W I

TTL LS 7407

Abstract: CI 7407 CI 7402 TTL LS 7402 ls 7408 TTL 74s02 CI 74LS02 74LS27 TTL 7425 TTL 74ls02
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL D7 54/7430, 54H/74H30 54S/74S30, 54LS/74LS30 Vcc NC r r r NC r D8 54S/74S133, 54LS/74LS133 D9 54S/74S134 Vcc NC r fi fi Ili ill HI Li Lil lil GND LzJ R R R R F IR R F I E RRRRRRRFl li lli lli lli J lill ill ill iJGND

74S301

Abstract: N74S301F N74S301 N74S301N N74S301R S54S301 S54S301F S54S301G
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 54/74S301 O.C. 256-BIT TTL RAM (2 5 6 x 1 ) DESCRIPTION The 54/74S301 Is a R e a d /W rite m em ory array w h ich fe a tu re s an open c o lle c to r o u t­ p ut fo r o p tim iz a tio n o f w ord e x p a n s io n in bused o rg a n iz a tio n s . M em ory e x p a n s io n

Contextual Info: SN5430, SN54LS30, SN54S30, SN7430, SN74LS30, 74S30 8 INPUT POSITIVE-NAND GATES DECEM BER 1 9 8 3 - R EV ISED MARCH 1988 SN 5430 . . . J PACKAG E SN 54LS30, SN 54S30 . . . J OR W PACKAG E SN 7430 . . . N PACKAGE SN 74LS30, SN 74S30 . . . D OR N PA CKA G E

Contextual Info: GD54/74S30 8-INPUT POSITIVE NAND GATE Description This device contains a single 4-input NAND gate and performs the following Boolean functions in positive logic. Y = A . B_ C _ D _ E _F. G . H_or_ Y = Â + B + C + D + E + F - I- G + H Function Table OUTPUT

74LS30PC

Abstract: 7430DC 7430PC 74H30DC 74S30PC 5430DM 74H30PC 74LS30DC 74S30DC
Contextual Info: 30 C O N N E C T IO N D IA G R A M S P IN O U T A 54/7430 o/ô //7 54H/74H30 / ;, W54S/74S30/ , \/54LS/74LS30 ^ 8 -IN P U T N A N D G A T E O ' O R D E R IN G C O D E : See S e c tio n 9 PIN PKG S OUT C O M M E R C IA L G R AD E M IL IT A R Y G R AD E V cc = + 5 .0 V ±5%,

TTL LS 7407

Abstract: TTL 7427 TTL 7402 LS 7430 LS 7402 74LS02 74LS30 ttl 7407 d1554 TTL 74s02
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL D7 54/7430, 54H/74H30 54S/74S30, 54LS/74LS30 Vcc NC r r r NC r D8 54S/74S133, 54LS/74LS133 Vcc NC r fi fi Ili ill HI Li Lil lil GND LzJ R R R R F IR R F I 5T5 R Fl R R R FI FI aia LU 111 111 Li] lij lil L J

74LS30PC

Contextual Info: NATIONAL SEMICOND -CLOGIO G5E D I b 5 0 1 1 2 3 ou CO NN ECTIO N DIAGRAMS PINO UT A 54/7430 54H/74H30 54S/74S30 54LS/74LS30 8-INPUT NAND GATE ORDERING CODE: See Section 9 PIN PKGS OUT CO M M ERC IAL GRADE M ILITARY GRADE V cc = +5.0 V ±5%, T a = 0 °C to +70° C

74S200

Abstract: 74S301 N74S200N N74S201N N74S301
Contextual Info: S ig n e tic s Memories - Bipolar Ram C O N N E C T IO N D IA G R A M N74S200/201, 74S301 - 256 Bit TTL Ram G E N E R A L D E SC R IPTIO N The 54/74S 200/201 and 54/74S301 are re a d /w rite m em ory arrays w h ich featu re e ith e r open c o lle c to r o r tri-sta te o u t­

74S301

Abstract: WSA3
Contextual Info: Philips Components-Signetics Document No. 853-0126 74S301 ECN No. 86487 256-bit TTL bipolar RAM Date of Issue November 11, 1986 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 74S301 is a Read/Write memory array which features an Open-Collector

74S206

Abstract: 74s201
Contextual Info: 54/74S ELECTRICAL CHARACTERISTICS See Notes - Page 50 INPUT VOLTAGE V|L (V) PARAMETER TEST CONDITIONS LOW LEVEL VÇC~MIN MIN TYP MAX OUTPUT VOLTAGE V|C(V) V|H (V) HIGH LEVEL CLAMP VOLTAGE V çç= M IN VCC = “ IN l|=-18 mA MIN TYP MAX MIN TYP VOH (V) HIGH LEVEL

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

74s* programming

Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131

74s288

Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
Contextual Info: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A

74S387

Abstract: 74s288 74S474 74S188 MMI 6381 74S287 27ls09 74S209 MMI 6349 74s201
Contextual Info: Signetics Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A 93417

ITT 7400

Abstract: 74h01 74H04 TTL 7414 74LS132 74h00 fairchild 7404 74LS20 74LS10 74LS00
Contextual Info: FAIRCHILD DIGITAL TTL SSI FUNCTIONS c o_ ♦5 5= c o o c 3 u. — O » a> § ‘5 î ë i E si ^ £ CO o _i in w « Ì o 5 o _i c O V) Z. • 0 > « T ï e E ^ </) £E CO O - £ CO ^ s i i<0 Z ■E, o <f “> .S ’ </) in c I n §~E c 2 o o> O « o û

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

SNS4LS30

Abstract: LS 7430
Contextual Info: TYPES SN7430, SN74LS30, 74S30 SN5430, SN54LS30, SN54S30 8-INPUT POSITIVE-NAND GATES REVISED DECEMBER 1983 _ • I Package O ptions Include Standard P lastic N and C e ra m ic (J) 300-mil D ual-ln -Line P a c k a g e s, P la s t ic S m a ll O utline (D) and

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

74LS115

Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Contextual Info: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con­ necting first darlington emitter to output should have series resistor. LS33 5-25

dm8130

Abstract: 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76
Contextual Info: 19 7 6 N atio n al S e m ico n d u cto r C o rp . p 1 ? I m • ' % TTL Data Book D EV IC E MIL i 2502 2503 2504 5400 54H00 54L00 54LS00 5401 54H01 54L01 54LS01 5402 54L02 54LS02 5403 54L03 54LS03 5404 54H04 54L04 54LS04 5405 54H05 54L05 54LS05 5406 5407 5408

DM74367

Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Contextual Info: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,