82S16
Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
Contextual Info: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns
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n82s16n82s116n82s17n82s117+1282s16/11682s17/11725jia100jua82s16n82s16nn82s116n82s17 "pin compatible82s1782s116s82s16n82s117f
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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74S301
Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is
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8192-bit1024x882ls18182ls18i+12n82ls181n82hs185n82s25n82s1674s301tbp28s42signetics prom1024x8 promn82s123s82ls181n82s141tbp28p86
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82S16
Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
Contextual Info: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p tim iz a tio n o f w ord e xp a n sio n in bused
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256-bit82s16/82s1782s17+4n82s16fn82s17fs82s16fs82s17f
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74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+10n82s131mcm7643cn82s137n82hs137mcm7641cn82s14174s* programmingn82s16prom 256x4 bitmcm7681c
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82S16
Abstract: 82516 N82S16 82S17 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"
Contextual Info: JANUARY 1983 BIPOLAR M EM O R Y DIVISION 256-BIT BIPOLAR RAM 256 X 1 DESCRIPTION T he 82S16 a n d 82S17 are R e a d /W rite m e m o ry a rra y s w h ic h fe a tu re e ith e r ope n c o lle c to r o r 3 -s ta te o u tp u t o p tio n s fo r o p tim iz a tio n o f w o rd e x p a n s io n in b u s e d
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256-bit82s16/82s1782s17+782516n82s16n82s16fn82s17fs82s16fs82s17f82s17 "pin compatible
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74s188 programming
Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE
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38510/machmil-m-3851074s188 programming74s471+8n82s0674s470dip18 packagestr 52100marking code n-channel mos field effect transistor74s472 prom programming8080a74s287 programming instructions
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om 322
Abstract: 82s185 signetics handbook signetics military data handbook
Contextual Info: Philips Components-Signetics Document No. 853-0131 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 82S185 is field programmable, which means that custom patterns are
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82s18582sredom 322signetics handbook+1signetics military data handbook
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6301-1 prom
Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im m e d ia te ly a va ila b le by fo llo w in g th e fu s in g
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8192-bit1024x882hs181/82hs181a82hs181+14n82hs185n82s25n82s16tbp18sa030j6301-1 prom3622 prommmi 3601prom 3601intel 3601 promprom intel 36019344cn82s14174s189n82s137
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N82S191
Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate ly available by following the fusing proce dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.
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384-bit2048x882s191n82s191+11n82hs185n82s25n82s166301-1 promsignetics prom6331-1prom intel 3601signetics prom n82s14174s200hm76161-593427c
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SIGNETICS
Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+14n82s131mcm7643cn82s137n82hs137mcm7641cn82s141signeticssignetics bipolar memory cross referencen82s191n82s25tbp28p8674s289n82s129tbp24s41
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N82S141
Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ly available by fo llo w in g th e fu sin g p roce
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8192-bit2048x482hs185/82hs185a82hs185+14n82hs185n82s25n82s16tbp18sa030jn82s14193427c6331-1n82s137mmi 6301-174s200n82s12974s206mmi 6341-1am27s29c
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THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
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200x300x360mthermistors nsp 037thyristor tag 9118ica 0726 0148 transformer+7a1273 y k transistoram97c11cntransistor sk a1104pm7a2qb8708bzy79yh 5032
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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triac tag 851870146ds3654x2864ad+67 segment display rl s5220tc9160la 4440 amplifier circuit diagram 300 wattphilips ecg master replacement guidevtl 3829 a-c4tca965 equivalent
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N82S181
Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.
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8192-bit1024x882s180/82s181+1082s181n82s181n82s14174s200mmi 36016331-1 promtbp24sa1093427cn82s147mmi 6330
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N82S131
Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+8n82s131mcm7643cn82s137n82hs137mcm7641cn82s141n82s123mcm7681c
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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gfb7400dfey101btca290arifa pmr 2026+6ef184orp52mullard mullard quick reference guidegzf1200itt a2610yd 6409
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signetics handbook
Abstract: A4t 65 82S185
Contextual Info: Philips Components-Signetics Document No. 8 5 3 -0 1 3 1 ECN No. 864 8 7 Date of Issue Novem ber 1 1 ,1 9 8 6 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 8 2S 1 85 is field programmable,
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82s185750ilsignetics handbooka4t 65 |
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FZH 191
Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine
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integrie8510fzh 191fzj 101fzh 261+7fzh 111fzh 171fzh111fzh 101fzh 161fzh 141fzh 281
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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82S16
Contextual Info: Philips Components-Signetics Document No. 853-0141 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S16 256-bit TTL bipolar RAM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 82S16 is a Read/Write memory array which features 3-State outputs for
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