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    N82S17 Search Results

    N82S17 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    N82S17
    Signetics Bipolar Memory IC Data Book 1982 Scan PDF 135.79KB 3
    N82S17B
    Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF 146.68KB 2
    N82S17F
    Signetics 256-Bit Bipolar RAM Original PDF 81.32KB 2
    N82S17F
    Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF 146.68KB 2
    N82S17F
    Signetics Integrated Circuits Catalogue 1978/79 Scan PDF 215.78KB 7
    N82S17N
    Signetics 256-Bit Bipolar RAM Original PDF 81.32KB 2
    N82S17N
    Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF 146.69KB 2
    N82S17N
    Signetics Integrated Circuits Catalogue 1978/79 Scan PDF 215.78KB 7
    N82S17R
    Signetics 256-Bit Bipolar RAM Original PDF 81.32KB 2
    SF Impression Pixel

    N82S17 Price and Stock

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    Signetics N82S17F

    IC,SRAM,256X1,S-TTL,DIP,16PIN,CERAMIC
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    Quest Components N82S17F 20
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    Others N82S17F

    INSTOCK
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    Chip 1 Exchange N82S17F 2,068
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    Signetics N82S17N

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc N82S17N 12
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    N82S17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    82S16

    Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
    Contextual Info: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns


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    n82s16n82s116n82s17n82s117+1282s16/11682s17/11725jia100jua82s16n82s16nn82s116n82s17 "pin compatible82s1782s116s82s16n82s117f PDF

    82S16

    Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
    Contextual Info: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w ord e xp a n sio n in bused


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    256-bit82s16/82s1782s17+4n82s16fn82s17fs82s16fs82s17f PDF

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


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    38510/machmil-m-3851074s188 programming74s471+8n82s0674s470dip18 packagestr 52100marking code n-channel mos field effect transistor74s472 prom programming8080a74s287 programming instructions PDF

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    8192-bit1024x882hs181/82hs181a82hs181+14n82hs185n82s25n82s16tbp18sa030j6301-1 prom3622 prommmi 3601prom 3601intel 3601 promprom intel 36019344cn82s14174s189n82s137 PDF

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


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    384-bit2048x882s191n82s191+11n82hs185n82s25n82s166301-1 promsignetics prom6331-1prom intel 3601signetics prom n82s14174s200hm76161-593427c PDF

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


    Original
    38510/machmll-m-38510z501300z501200+13z501201z012510zol1510ay-5-1012ali m 3329processor ali 3329ali 3329 bali 3329sn74188sn74s188str 52100sn7452replacement of bel 187 transistor PDF

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    8192-bit2048x482hs185/82hs185a82hs185+14n82hs185n82s25n82s16tbp18sa030jn82s14193427c6331-1n82s137mmi 6301-174s200n82s12974s206mmi 6341-1am27s29c PDF

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    200x300x360mthermistors nsp 037thyristor tag 9118ica 0726 0148 transformer+7a1273 y k transistoram97c11cntransistor sk a1104pm7a2qb8708bzy79yh 5032 PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    dg211dg300dg308tca965 equivalent+9uln2283capacitor 473j 100nuaf771transistor gdv 65apbd352303cm2716taa2761taa4761uln2401 PDF

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    8192-bit1024x882s180/82s181+1082s181n82s181n82s14174s200mmi 36016331-1 promtbp24sa1093427cn82s147mmi 6330 PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    gfb7400dfey101btca290arifa pmr 2026+6ef184orp52mullard mullard quick reference guidegzf1200itt a2610yd 6409 PDF

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


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    integrie8510fzh 191fzj 101fzh 261+7fzh 111fzh 171fzh111fzh 101fzh 161fzh 141fzh 281 PDF