41N60 Search Results

Contextual Info: Ultra-Low VCE sat IGBT IXGH 41N60 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA

servo motors

Abstract: robot control MJ800
Contextual Info: Ultra-Low VCE sat IGBT IXGH 41N60 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA

Contextual Info: □ IXYS Ultra-Low VCE sat IGBT IXGH 41N60 V CES ^C25 V CE(sat) = 600 V = 76 A = 1.6V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20 V v GEM Transient

Contextual Info: riTvv<v Ultra-Low VCE sat IGBT IXGH 41N60 V CES ^C25 V CE(sat) = 600 V = 76 A = 1.6 V Preliminary data Symbol Maximum Ratings Test Conditions v C ES Tj = 25°C to 150°C 600 V VC G R Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGES Continuous +20 V v GEM Transient

Contextual Info: Ultra-Low VCE sat IGBT IXGH 41N60 VCES = 600 V •c25 = 76 A VcE(Sa„ = 1.6 V Preliminary data Symbol Test C onditions Maximum Ratings V CES L = 25°C to150°C 600 V V COR T J = 25° C to 150° C; RGg = 1 MD 600 V VQES Continuous ±20 V V gem Transient ±30

ixysmosfets

Contextual Info: DIXYS Ultra-Low VCE sat IGBT vCES 41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01