3SK FET Search Results

k307

Abstract: 3SK303 3SK307
Contextual Info: Panasonic H igh F requency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N -C hannel MOS 3SK 303 F o rV H F amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -EH EE • Downsizing of sets by mini or S-mini type package, and automatic

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

3SK164

Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,

sb30-03p

Abstract: 3SK181 DSE015 3SK189
Contextual Info: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251

Contextual Info: Field Effect Transistors • GaAs MES Metal Semiconductor FETs # For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. V ds (V) V g is * V gs (V) P (mW) PG typ. (dB) NF typ. (dB) V g2S (V) Package

2SK1964

Abstract: 3SK241 3sk272 2SK1963 3SK273 2SK649 3sk287 2SK1962 2SK690 D37B
Contextual Info: Field Effect Transistors • GaAs MES Metal Semiconductor FETs # For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. V ds (V) V g is * V gs (V) (V) P (mW) PG typ. (dB) NF typ. (dB) V g2S Package

3sk fet

Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Contextual Info: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

3SK81

Abstract: 3SK136
Contextual Info: HITACHI 3SK136 S ILIC O N N-CHANIiNIEL DUAL G A TE M OS FET V H F TV T U N E R R F A M P LIFIE R i £L - p O JÍÜ * au ~ l • H + ■ »« •jl : . i . . . . . ! ! . i «□ 'L j I*. „ az « j * ■ I0.6I»W ü. H Lj" 1. Siiun.« S .0,98. j.0 ^ 5.

3sk fet

Contextual Info: Panasonic High Frequency FETs 3SK301 Tentative , 3SK305 (Tentative) Silicon N-Channel MOS FET For lo w -v o lta g e o p e ra tin g VHF a m p lific a tio n 3SK301 • Features 0 Achieving the equivalent performance to the conventional prod­ ucts under low voltage operation.

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

cq 447

Abstract: 3SK 177
Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK-4 3< . 4 ] 1• Source 2. Gatel

3SK180

Abstract: V1H marking 35K18
Contextual Info: O r d e r in g n u m b e r : EN2129B _ 3SK180 N0.2129B N-Channel Silicon MOS FET Dual Gate High-Frequency General-Purpose Amp Applications A pplications • FM tuners and VHF tuners. F eatures • High power gain and low noise figure. • High forward transfer admittance.

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

2SJ356

Abstract: NEC 2Sj356 TC-8009
Contextual Info: = t-5 > • 5 / - h NEC ^ MOS W M tt* h 7 > v ^ ^ MOS Field Effect Transistor 2SJ356 r M OS FET 3â{i 2SJ356t ¿P31 - ^ U » M O S FETT' , 5 V t S ^ I C O t t i t iC ¿ i ¡ S : mm i g i l l i X < -y ? > Î ' I f î î o Ÿ Sp p l â ' t ' > f i i / L ^ ' f g ; <

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

Contextual Info: CONTENTS BEHIND THE COVER Old Fashions A proud parad e o f period costu m es brings Ja p a n e se history to life at Jid ai Matsuri. ON THE HORIZON Giant Magnetoresistive Heads for Hard Disk Drives; A Tale o f Chromium, Manganese, Platinum, and Cobalt New tech n o log y allow s n o teb o o k H D Ds to p ack in as

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)

transistor 2sk

Abstract: JAPANESE 2SC TRANSISTOR DATA BOOK 2010 JAPANESE 2SC TRANSISTOR 2010 JAPANESE TRANSISTOR 2SC DATA BOOK 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC 2010 transistor 2SA data book C7012 JAPANESE TRANSISTOR 2SC data book transistors 2SA
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©