K2395 Search Results

64kx4

Abstract: HY51C264-12 strobe w24 64Kx4-Bit
Contextual Info: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

Contextual Info: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in­

ka 75000

Abstract: HY5164-15 HY5164-12 HYUNDAI car Hyundai Semiconductor HY5164 7500 GI 536 POWER 300MIL HY5164-10
Contextual Info: HYUNDAI H Y 516 4 6 5 ,5 3 6 x 1-Bit D y n a m ic R A M .SEM IC O N DUCTO R OCTOBER 1986 DESCRIPTION T he HY5164 is a high speed 65,536 bit dynam ic R andom Access M emory. Fast page m ode has the features of fast usable speed, low pow er, and a typical soft error rate of less than 10 Failures In

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

tca 4401

Abstract: HY5164-15
Contextual Info: OCTOBER 1986 DESCRIPTION, FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a typical soft error rate of less than 10 Failures In Time FITfe . The HY5164 is ideally suited for ap­

hyundai

Abstract: 536X4
Contextual Info: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­

dvb t receiver circuit diagram

Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram
Contextual Info: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital

TPC 8406

Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
Contextual Info: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast

HY27C64-20

Abstract: HY27C64-15 HY27C64-30 IN3064
Contextual Info: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

Hyundai Semiconductor

Abstract: hy27c64-20 HY27C64A
Contextual Info: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

Contextual Info: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

tca 4401

Abstract: 5164-10 K2395 R/tca 4401
Contextual Info: HY5164 A HYUNDAI 6 5 ,5 3 6 x 1-B it D y n a m ic R A M -¿ ^ S E M IC O N D U C T O R OCTOBER 1986 DESCRIPTION FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a

hyundai

Abstract: 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor HY62C87
Contextual Info: P R E L IM IN A R Y HY62C87 Æ HYUNDAI /• ^ S E M IC O N D U C T O R 6 5 ,5 3 6 x l-B it CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using high­ perform ance HYCMOS process technology.

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

HY51C64-12

Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
Contextual Info: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error

HY62C64

Abstract: 8192X8BIT
Contextual Info: H Y U N D A I E L E C T R O N I C S 03 D E | 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

Contextual Info: PRELIMINARY JL H Y U N D A I /• ^ S E M IC O N D U C T O R HY62C87 65,536xl-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using highperformance HYCMOS process technology.

Contextual Info: HY51C264 HYUNDAI ▲ SEMICONDUCTOR 64K x4-B it Dual Port CMOS RAM OCTOBER 1986 DESCRIPTION FEATURES The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

Contextual Info: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not