W777777 Search Results

tney2

Abstract: HM5241 5241605
Contextual Info: HM5241605 Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. _ F e a tu re s •3.3V Power s u p p

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: EDI816256CA •lì Hi-R£LiASIÜTY PRODUCT 256Kx16 MONOLITHIC SRAM FEATURES The EDI816256CA is a 4 megabit M onolithic CMOS Static RAM. The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access

Contextual Info: ^ Z ilß G P r e lim in ary P r o d u c t S pecificatio n Z85C80 SCSCI S e r ia l C o m m u n ic a t io n s A nd S m a l l c o m p u t e r in t e r f a c e FEATURES • Low power CMOS ■ Local Loopback and Auto Echo modes. ■ Two independent, 0 to 2.5M bit/second, full-duplex

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

AMP PBT GF15 connector

Abstract: PBT GF15 connector AMP PBT GF15 3 pin
Contextual Info: W ire to Board Connectors A M P 1 .25m m Centerline Connectors for FFC Cable AMP 1 .25mm Centerline Connector for FFC Cable provide a reliable means of connecting FFC cable with conductors on 1 ,25mm centerline to the printed circuit board. These connectors are

W777777

Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 32-BIT SINGLE-CHIP MICROCOMPUTER M32R family / M32R/D series M32000D3FP User’s Manua 1998-1-16 This manual was prepared during the developm ent stage of this product. Consequently, some of the information may differ from the actual delivered product.

mt4c1004j

Abstract: MT4C1004
Contextual Info: MT4C1004J L 4 MEG X 1 DRAM (MICRON DRAM 4 MEG x 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and packages • High-performance C M O S silicon-gate process

Contextual Info: UF SERIES U FS-B-04 Type Crimp Type Sockets for FAP Mating, Two Row Type •O R D ER IN G CODE UFS— 40B— 04 "E Design number (for internal use only) Connector type B = FAP mating_ Number of leads UF series sockets Part No No.oiUa A UFS— 10B— 04

Contextual Info: P r e lim in a r y P r o d u c t S p e c ific a t io n Z85C80 SCSCl S e r ia l C o m m u n ic a t io n s A n d S m a l l c o m p u t e r in t e r f a c e FEATURES • Low power CMOS ■ Local Loopback and Auto Echo modes. ■ Two independent, 0 to 2.5M bit/second, full-duplex

W777777

Contextual Info: JUN 1 2 1992 Ijr‘ VITEUC V52C8128 MULTIPORT VIDEO RAM WITH 128KX8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 80 10 Max. RAS Access Time, tRAc 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)

Contextual Info: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )

chn 619

Abstract: LSI SF 2300
Contextual Info: O K I Semiconductor MSM6588 MSM6588 contents GENGERAL DESCRIPTION. 568 FEATURES. 568

MT58LC32K36C4

Contextual Info: MT58LC32K36C4 32 KX 36 SYNCBURST SRAM |u iic :n o N 32K x 36 SRAM I +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access tim es: 4.5, 5, 6, 7 and 8ns

HM514100

Contextual Info: HM514100L Series Low Power Version 4,194,304-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION HM514100UP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x 1-bit. HM514100 has realized high density, higher performance and various func­

Contextual Info: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o

Contextual Info: MOSEL' VITELIC V53C8512/V53C9512 HIGH PERFORMANCE, LO W POWER 512K x 8 AND 5 1 2 K x 9 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8512/V53C9512 PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, tflAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (ïcaa)

Z53C8003

Abstract: Arcom Z53C800
Contextual Info: M ARCOM DC257 5 DOCUMENT CONTROL MASTER P r o d u c t S pec ific a t io n Z53C80 S mall C omputer S ystem Interface ( S C S I) Q1/92 ^ S LG E P r o d u c t S p e c if ic a t io n Z53C80 SMALL COMPUTER System interface (SCSI) FEATURES • DMA or programmed I/O data transfers

Contextual Info: irv i * * * SM5361000H-7 4MByte IM X 36 CMOS DRAM Modules General Description Features The SM 5361000H-7 is a high performance, 4-megabyte dynamic R A M m odule organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module (SIMM ) package.

BX1750A

Abstract: BX1750A-3D BX1750 MIL-STD-1750 CMGA17-P113 surom 5962-8951901MXC CMGA5-P113 mil-std-1750a 5962-8951903mxc
Contextual Info: REVISIONS LTR DATE DESC R IPTIO N REV SH EE T REV SH EE T A PPROVED YR-M O -DA Technical changes to 1.2.2 and 1.4. Technical changes in table I. Adjustment to figure 4. Editorial changes throughout. 90-08-15 William K. Heckman Add device types 02, 03, 92, and 93. Update boilerplate to full OPOPN SMD.

Contextual Info: iw‘ VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)

W777

Abstract: electronica ddr
Contextual Info: H M 5 2 1 6 8 0 5 Preliminary S e r ie s 1,048,575-word x 8-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of tbe clock input. The HM5216805 is offered in 2 banks for improved performance. Features •3J V Power supply

HM514400JP-8

Abstract: hm5144008
Contextual Info: H I TA CH I/ L O G I C / A R R A Y S / M E M SIE D 44^203 GOlflbTS 3TT IHIT2 HM514400 Series-1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM514400JP Series The Hitachi HM514400 is a CMOS dynamic RAM organized 1,048,576 word x