MT4C1004 Search Results

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM |U|CRON 4 MEG x 1 DRAM DRAM 5V, STANDARD OR SELF REFRESH •n FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM (M IC R O N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages

Contextual Info: MICRON T E C H N O L O G Y INC 5SE J> • b l l l S M T 00041*10 fc.03 ■ MRN MT4C1004J 4 MEG X 1 DRAM MICRON DRAM 4 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM [MICRON 4 MEG DRAM X 1 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply

mt4c1004j

Abstract: MT4C1004
Contextual Info: MT4C1004J L 4 MEG X 1 DRAM (MICRON DRAM 4 MEG x 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and packages • High-performance C M O S silicon-gate process

mt4c1004

Contextual Info: A SÌ y M S ' l f \ : Si MI* 0 \ | 5 . < I O f l j , \ !* GUIDE R ^ F F R F N C F AUSTIN SEMICONDUCTOR APPROVED SM D’S Continued) SMD ASI PART NUMBER MT4C4067 MT4C1004 MT4C1001 MT4C4256 PACKAGE TYPE (t) SPEED (its) PART NUMBER C CN EC 100 120 150 9213201

MT4C1004

Contextual Info: M T4C1004J S 4 MEG X 1 DRAM (M IC R O N DRAM 4 MEG x 1 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (M T4C1004J S only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process

l992

Abstract: S992 T4C1004JDJ-6
Contextual Info: l^ iiC R MT4C1004J 4 MEG X 1 DRAM o r s j DRAM 4 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225m W active, typical

Contextual Info: MT4C1004J 4 MEG X 1 DRAM |U |IC = R O N 4 MEG X 1 DRAM DRAM DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical

MT4C1004J

Abstract: MT5C1005
Contextual Info: MT4C1004J MT5C1005 883C 4 MEG 256K xx 14 DRAM SRAM AUSTIN SEMICONDUCTOR, INC. DRAM 4 MEG x 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 FEATURES • Industry standard x1 pinout, timing, functions and

ds1015

Contextual Info: 4 MEG X 1 FPM DRAM l^ lld R O N MT4C1004J DRAM FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) o r 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and

mt4c1004j

Abstract: 4C1004 4c1004j
Contextual Info: MT4C1004J L 4 MEG X 1 DRAM |u iic = n o N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cy cie refresh d istrib u ted a cro ss 16m s (M T 4C 1004J) o r 128m s (M T 4C 1004J L only) • In d u stry-stan d ard p in o u t, tim ing , fu n ctio n s and

4c1004

Contextual Info: M IC R O N I MT4C1004J S 4 MEG X 1 DRAM •ZMCONDUCTÜR IM C 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (M T4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and

Contextual Info: ASD MT4C1004J 883C 4 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 4 MEG X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 18-Pin DIP FEATURES • Industry standard x l pinout, timing, functions and

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM [M IC R O N DRAM 4 MEG x 1 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH o 3D > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and

Contextual Info: MICRON SEMICONDUCTOR INC b3E T> • b 111S 4 =1 DDG7Sbñ 271 B U R N MT4C1004J L 4 MEG X 1 DRAM MICRON 4 MEG x 1 DRAM DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only)

MT4C1004

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM |U|K=RON DRAM 4 MEG X 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (M T4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process

MT4C1004

Contextual Info: MICRON TECHNOLOGY INC 17 E D b lU S M ì 0001770 1 • ADVANCE M IC R O N ■ MT4C1004 883C 1ECHNO«.OCV INC MILITARY DRAM 4 MEG x 1 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard x l pìn-out, timing, functions and packages • High performance, CMOS silicon gate process

Contextual Info: AU ST IN S E M I C O N D U C T O R INC M i c r o büE J> • T G D 5 1 1 7 0 G G G 1 4 4 441 B I A U S T MT4C1004J 883C 4 MEG X 1 DRAM n -T - 4 4 'z v i 5 MILITARY DRAM 4 MEG X 1 DRAM FAST PAGE MODE DRAM AVAILABLE AS MILITARY SPECIFICATONS

MARKING PM5

Abstract: MT4C1004J MT4C1004JDJ-6 FPM DRAM MT4C1004 a10 marking
Contextual Info: OBSOLETE 4 MEG x 1 FPM DRAM MT4C1004J DRAM FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: MT8D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin single-in-line m emory module SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: M I CR ON T E C H N O L O G Y INC 5SE ]> bl 1 1 S 4 e} OQOMfcjfl? 332 MICRON • 4 MEG TtCHNOLOGV INC DRAM MODULE X 8 IURN MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE MT8D48 LOW POWER, EXTENDED REFRESH (MT8D48 L) FEATURES • Industry standard pinout in a 30-pin single-in-line