MT5C1005 Search Results

T5C1005DJ

Contextual Info: p ilC R O N 256K SRAM MT5C1005 X 4 SRAM 256K x 4 SRAM FEA TU R ES • High speed: 1 2 ,1 5 ,1 7 ,2 0 ,2 5 and 35 • High-perform ance, low-power, CM OS double-m etal process • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE and OE options

transistor a7t

Contextual Info: as D MT5C1005 883C 256K X 4 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 256K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES • • • • High speed: 15, 20, 25,35 and 45ns Batteiy Backup: 2V data retention

10A16

Abstract: transistor marking A9
Contextual Info: MT5C1005 883C 256K x 4 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 256K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 28-Pin DIP (400 MIL) High speed: 15, 20, 25, 35 and 45ns Battery Backup: 2V data retention Low power standby

Contextual Info: SRAM MT5C1005 Austin Semiconductor, Inc. 256K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 28-Pin DIP (C) (400 MIL) •MIL-STD-883 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\

Contextual Info: MI C R O N TECHNOLOGY INC Ì7E D • ¿111541 0001660 fl ADVANCE M IC R O N ■ MT5C1005 883C u c w « x o c .y « c MILITARY SRAM 256K x 4 SRAM WITH OUTPUT ENABLE FEATURES • • • • • • • • PIN ASSIGNMENT Top View High speed: 25,30,35,45 and 55ns

Contextual Info: \ MT5C1005 883C 256K X 4 SRAM AUSTIN SEM IC O N D U C TO R, INC. SRAM 256Kx 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • M IL-STD-883, Class B • Radiation tolerant consult factory FEATURES • • • • • High speed: 15, 20, 25, 35 and 45ns Battery Backup* 2V data retention

MT4C1004J

Abstract: MT5C1005
Contextual Info: MT4C1004J MT5C1005 883C 4 MEG 256K xx 14 DRAM SRAM AUSTIN SEMICONDUCTOR, INC. DRAM 4 MEG x 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 FEATURES • Industry standard x1 pinout, timing, functions and

S01a

Contextual Info: MICRON S E M I C O N D U C T O R INC b7E » H t l l l S H R D O Q ^ fi ñ 7üb B H M R N MICRON • S01A 1 MEG SRAM DIE SEViCONOUCTOa i*c. SRAM DIE 1 MEG SRAM MT5C1001 SOIA, MT5C1005S01A and MT5C1008S01A FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS process

Contextual Info: MICRON TECHNOLOGY INC b lllS H T 5SE D iCRCDN D 0 0 3 m 2 7ññ 256K MRN MT5C1005 X 4 SRAM T ^ ß -2 3 -tO SRAM 256K x 4 SRAM FEATURES • • • • • • High speed: 12», 15*, 17,20,25,35 and 45ns High-performance, low-power, CMOS double-metal process

Contextual Info: M SI I \ SI M k O M M I O K s SRAM l\( MT5C1005 883C 2B6K x 4 S R A M 256K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • M IL -S T D -8 8 3 FEATURES • H ig h sp eed : 15, 20, 2 5 , 3 5 a n d 4 5 n s • B a ttery B a c k u p : 2 V d a ta re te n tio n

100 20L A1 diode

Abstract: MT5C1005 4216 d-1
Contextual Info: SRAM MT5C1005 Austin Semiconductor, Inc. 256K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 28-Pin DIP (C) (400 MIL) •MIL-STD-883 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\

Contextual Info: SRAM MT5C1005 256K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 28-Pin DIP (C) (400 MIL) •MIL-STD-883 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\ Vss FEATURES • • •

Contextual Info: MICRO N T E C H N O L O G Y INC S5E D • Q O O S b 3 7 7T4 H M R N MT5C1005 883C 256K X 4 SRAM |V 4 IC R O N jT -M t-Z .V lO 256K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B • Radiation tolerant (consult factory)

MT5C2568

Abstract: 16kx4 8833 256kx1 IDT7188 41024 84256 CY7C PDM41024 EDI88130
Contextual Info: SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. CYPRESS AUSTIN DESCRIPTION IDT AUSTIN DESCRIPTION CY7C 106 MT5C1005 256Kx40E IDT61298

Contextual Info: SRAM MT5C1005 256K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 28-Pin DIP (C) (400 MIL) •MIL-STD-883 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\ Vss FEATURES • • •

transistor t5c

Contextual Info: PRELIMINARY MT5C1005 256K X 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 25,35, and 45ns • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE and OE

256K x 8 SRAM dip

Contextual Info: MT5C1005 256K X 4 SRAM |U|ICZRON 256K X 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12*, 15*, 17, 20, 25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

MT5C1005-25

Abstract: WP1Z
Contextual Info: M IC R O N I 256K r.'ICONDUCTOR INC SRAM MT5C1005 X 4 SRAM 256Kx 4 SRAM FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages Plastic DIP 400 mil Plastic SOJ (400 mil) None DJ • 2V data retention (optional)

DC1307

Abstract: MT5C1005DJ-25IT
Contextual Info: MICRON SEMICONDUCTOR INC b7E D • bi ll 541 G G G ^ O S 3T1 H M R N M IC R O N I MT5C1005 256K X 4 SRAM 256K X 4 SRAM SRAM 5 VOLT SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 12,15,17,20, 25 and 35 • High-performance, low-power, CMOS double-metal

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

MT4C1024

Contextual Info: MT4C1024 883C 1 MEG x 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG x 1 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

LCC 18 Pin Package

Abstract: a14 marking marking A10 A12 marking
Contextual Info: SRAM FT5C1005 L 256K x 4 SRAM PIN ASSIGNMENT (Top View) SRAM . SPECIFICATIONS 32-Pin LCC 32-Pin SOJ 28-Pin DIP (400 MIL) •Comm, Ind, Mil Temp, MIL-STD-883 M5004 non compliant A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\ Vss FEATURES • • • •

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116