MT5C6404 Search Results

Contextual Info: yÄ . f im-. AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM MT5C6404 883C 1 6Kx 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859,-89692 • M IL-STD -883, Class B • Radiation tolerant (consult factory) 22-Pin DIP

Contextual Info: [M IC R O N MT5C6404 883C MILITARY SRAM 16K X 4 SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-86859, -89692 JAN (consult factory) MIL-STD-883, Class B Radiation tolerant (consult factory) 22L/300 DIP FEATURES A 5 t 1 -W 22 A6 [ 2 21 A 7 [ 3 20 19

MT5C6404

Abstract: SMD A6
Contextual Info: SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES

smd transistor marking HT1

Abstract: Ht1 SMD 6 pin smd ht1 ht1 smd MARKING SMD TRANSISTOR DQ MT5C6404 a13914 0000S12
Contextual Info: AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM 16K AVA ILA BLE AS M ILITARY SPECIFICATIONS MT5C6404 883C 16K X 4 SRAM X 4 SRAM PIN ASSIG NM ENT Top View • S M D 5 9 6 2 -86859, -89692 • M IL -S T D -8 8 3 , C la ss B • R ad ia tio n to le ra n t (co n su lt facto ry)

Contextual Info: ASi? MT5C6404 883C 16K x 4 SRAM A U S T I N S E M I C O N D U C T O R , INC. 16K X 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859, 5962-89692 • M IL-STD -883 22-Pin DIP FEATURES • H ig h sp eed : 1 2 ,15, 2 0 ,2 5 and 35ns

5C6404

Abstract: 5C640
Contextual Info: [v / llC R O fM 16K MT5C6404 X 4 SRAM 16K X 4 SRAM SRAM PIN A SSIG N M E N T Top View • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

Contextual Info: SRAM MT5C6404 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss • SMD 5962-86859 • SMD 5962-89692 • MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

MT5C6404

Abstract: 16kx4
Contextual Info: MT5C6404 883C 16K x 4 SRAM AUSTIN SEMICONDUCTOR, INC. 16K x 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, 5962-89692 • MIL-STD-883 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention

Contextual Info: MICRON TECHNOLOGY INC SSE ]> b i l l 5 4 e! 0 0 0 3 3 0 0 |v iia = O N 16K SRAM 34Ö MT5C6404 X 4 SRAM 16K X 4 SRAM • High speed: 8’, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

5962-89692

Abstract: MT5C6404
Contextual Info: SRAM MT5C6404 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss • SMD 5962-86859 • SMD 5962-89692 • MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

i1991

Contextual Info: | U |IC = R O N MT5C6404 SRAM 16K X 4 SRAM • High speed: 8 ,1 0 ,1 2 ,1 5 ,2 0 , 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5 V ±10% pow er supply • Easy m em ory expansion w ith CE option • All inputs and outputs are TTL com patible

2T815

Contextual Info: ^ -M.STIN Sf \ | | O N D I ( SOR SRAM i\( MT5C6404 883C 16K X 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SM D 5962-86859, 5962-89692 • M IL-STD-883 22-Pin DIP FEATURES • High speed: 1 2 ,1 5 , 20, 25 and 35ns

MT5C6404

Abstract: 5962-8685919TA MT5C6404C
Contextual Info: SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES

MT5C6404

Abstract: T5C6404
Contextual Info: I^ i i c r o n 16K SRAM 16K X MT5C6404 X 4 SRAM 4 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% power supply • Easy m em ory expansion w ith CE option • All inputs and outputs are TTL-com patible

Contextual Info: MICRON TECHNOLOGY INC c SSE ]> blllSM'ì GOOSbQS 1^4 B U R N MT5C6404 883C 16K X 4 SRAM IC Z R Q N 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89692 • MIL-STD-883, Class B • Radiation tolerant (consult factory)

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264