MT5C640 Search Results

smd marking A8

Contextual Info: SRAM MT5C6408 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: yÄ . f im-. AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM MT5C6404 883C 1 6Kx 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859,-89692 • M IL-STD -883, Class B • Radiation tolerant (consult factory) 22-Pin DIP

Contextual Info: — MT5C6401 883C 64K x 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86015 • M IL-STD-883, Class B • Radiation tolerant (consult factory) 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns

5962-3829452MZA

Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) • SMD 5962-38294 • MIL-STD-883 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: [M IC R O N MT5C6404 883C MILITARY SRAM 16K X 4 SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-86859, -89692 JAN (consult factory) MIL-STD-883, Class B Radiation tolerant (consult factory) 22L/300 DIP FEATURES A 5 t 1 -W 22 A6 [ 2 21 A 7 [ 3 20 19

micron sram

Abstract: taa 723 MT5C6408 MT5C6408DJ-15
Contextual Info: OBSOLETE 8/31/94 MT5C6408 8K x 8 SRAM SRAM 8K x 8 SRAM FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with ?C?E1, CE2 and ?O/E options

TOP SIDE MARKING OF MICRON

Abstract: micron sram 22-PIN MT5C6401
Contextual Info: OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM SRAM 64K x 1 SRAM FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with /C/E option • All inputs and outputs are TTL-compatible

MT5C6408

Contextual Info: I^ IIC R O N 8K SRAM MT5C6408 X 8 SRAM 8K X 8 SRAM PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE

chn 442

Abstract: chn 437 chn 439 chn 436 lz smd marking
Contextual Info: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)

Contextual Info: SRAM MT5C6405 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 24-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86859 • MIL-STD-883 A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ OE\ Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

Contextual Info: SRAM MT5C6401 64K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS A0 A1 A2 A3 A4 A5 A6 A7 Q WE\ Vss • SMD 5962-86015 • MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

MT5C6405

Abstract: micron sram
Contextual Info: M IC R O N MT5C6405T SRAM 16K 4 SRAM X CACH E-TAG FEATURES • • • • • • High speed: 12,15,20, 25, 30 and 35ns High performance, low power, CMOS double metal process Single +5V (±10% power supply Easy memory expansion with CE and OE options All inputs and outputs are TTL compatible

A7 RFTA

Contextual Info: |U |IC R O IS J MT5C6406/7 SRAM 16K x 4 SRAM FEATURES • H igh speed: 8 ,1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • H igh-perform ance, low -pow er, C M O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE1, CE2 and OE

Contextual Info: M IC R O N MT5C6401 SRAM 64K X 1 SRAM PIN ASSIGNM ENT Top View • High speed: 8 ,1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • S in g le + 5 V ±10% pow er supply • Easy m em ory expansion with CE option

A7 SMD TRANSISTOR

Abstract: smd transistor A13 MT5C6401
Contextual Info: SRAM MT5C6401 Austin Semiconductor, Inc. 64K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • A0 A1 A2 A3 A4 A5 A6 A7 Q WE\ Vss SMD 5962-86015 MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

MT5C6404

Abstract: SMD A6
Contextual Info: SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES

a12t

Abstract: A13T
Contextual Info: j MICRO N T E C H N O L O G Y INC SSE » • b l l l S M T G G 0 S b l 3 2b0 ■ URN MT5C6405 883C 16K X 4 SRAM I^ IIC R O N MILITARY SRAM 16K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859 • MHrSTD-883, Class B

smd transistor A6t

Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
Contextual Info: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)

JMicron

Contextual Info: MICRON S E M I C O N D U C T O R INC b?E D WÊ b 1 1 1 5 4 T DDG'îETB 77G H I M R N MICRON B 16K SK.'i'ONOUCTOR l'JC MT5C6405 X 4 SRAM 16K x 4 SRAM SRAM FEATURES • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal

Scans-053

Contextual Info: MT5C6405T M IC R O N SRAM 16K X 4 SRAM CACHE-TAG FEATURES PIN ASSIGNMENT (Top View A5[ A6[ OPTIONS • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access • Packages Plastic DIP (300 mil) Ceramic DIP (300 mil) Plastic SOJ (300 mil)

5C6408

Abstract: 1293-D
Contextual Info: OBSOLETE 8/31/94 MICRON I MT5C6408 8K x 8 SRAM SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply

aa ssr hen ev

Abstract: 1293-D 5C6401
Contextual Info: OBSOLETE 8/31/94 MICRON I MT5C6401 64K x 1 SRAM SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply

Contextual Info: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

smd transistor marking HT1

Abstract: Ht1 SMD 6 pin smd ht1 ht1 smd MARKING SMD TRANSISTOR DQ MT5C6404 a13914 0000S12
Contextual Info: AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM 16K AVA ILA BLE AS M ILITARY SPECIFICATIONS MT5C6404 883C 16K X 4 SRAM X 4 SRAM PIN ASSIG NM ENT Top View • S M D 5 9 6 2 -86859, -89692 • M IL -S T D -8 8 3 , C la ss B • R ad ia tio n to le ra n t (co n su lt facto ry)