MT5C1001 Search Results

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

Contextual Info: AUSTIN SEMICONDUCTOR, INC. SRAM MT5C1001 883C 1M X 1 SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • M IL -S T D -8 8 3 , C lass B • R a d ia tio n to le ra n t co n su lt fa cto ry FEATURES • H ig h s p e e d -. 15, 20, 25, 35 an d 4 5 n s

Contextual Info: |U|ICRON MT5C1001 SRAM 1 MEG X 1 SRAM • High speed: 20, 25, 35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL compatible OPTIONS

SMD MARKING A16

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

Contextual Info: MT5C1001 1 MEG X 1 SRAM M IC R O N 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES • High speed: 12*, 15», 1 7 ,2 0 ,2 5 ,3 5 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE option

A19T

Abstract: transistor marking A19 a19 t
Contextual Info: t» 17E D MICRON TECHNOLOGY INC blllSMI QDG1Ö70 T I ADVANCE MICRON • MT5C1001 883C UCW*XCf.Y MC MILITARY SRAM 1MEG X 1 SRAM ■%-ii OS FEATURES PIN ASSIGNMENT Top View High speed: 25,30,35,45 and 55ns Automatic chip enable power down All inputs and outputs are TTL compatible

smd ya

Abstract: xa smd LA smd
Contextual Info: a s ì? M ' - r p v S f 'M I« « i li Fï !N > ^ 0 R E F E R E N C E GUIDE AUSTIN SEMICONDUCTOR APPROVED SM D’S (Continued) ASI PART HUMBER MT5C1009 MT5C1001 MT5C1001L (LVDR) MT5C2561 MT5C2564 MT5C2564L (LVDR) MT5C2565L (LVDR) MT5C2568 SMD SPEED (ns)

A13 smd

Abstract: SMD a7 Transistor MT5C1001 a15 SMD
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

Contextual Info: ASi? MT5C1001 883C 1M X 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-92316 • M IL -S T D -8 8 3 28-Pin DIP 400 MIL FEATURES • • • • High speed: 15, 20, 25, 35 and 45ns

Contextual Info: PRELIMINARY MT5C1001 SRAM 1MEG X 1 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 25,35, and 45ns • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE option • All inputs and outputs are TTL compatible

S01a

Contextual Info: MICRON S E M I C O N D U C T O R INC b7E » H t l l l S H R D O Q ^ fi ñ 7üb B H M R N MICRON • S01A 1 MEG SRAM DIE SEViCONOUCTOa i*c. SRAM DIE 1 MEG SRAM MT5C1001 SOIA, MT5C1005S01A and MT5C1008S01A FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS process

TTA-16

Contextual Info: MICRON TECHNOLOGY INC blllSM'ì DDD33Sb 02^ • MRN MT5C1001 1 MEG X 1 SRAM 55E ]> I^ IIC Z R O N - ' V H ^ l ì > 0 5 SRAM 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal

920a3

Contextual Info: |V|IC=RON 1 MEG SRAM MT5C1001 X 1 SRAM 1 MEG X 1 SRAM • High speed: 12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible

a15 SMD

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

MT5C1001DJ-20

Abstract: a1911q
Contextual Info: MT5C1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES • High speed: 12’ , 15’ , 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

Contextual Info: . MICRON TECHNOLOGY INC I m C Z R O N MT5C1001 883C 1 MEG X ! SRAM _ SSE D • 1 MEGx 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B • Radiation tolerant (consult factory) 28-Pin DIP

Contextual Info: a A U S T I N S F M I C O M M C T O R . INC SRAM MT5C1001 8 8 3 C X 1 SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View 00 CM • M IL-STD -883, Class B • Radiation tolerant (consult factory) FEATURES A io AH A12 A13 AU A15

MT5C1001DJ-20

Contextual Info: MICRON SEMICONDUCTOR INC b?E J> WÊ b l l l S 4 ti OOQ'iEBb ÖT3 • MICRON ■ 1 MEG SEMICONDUCTOR. INC SRAM MT5C1001 X 1 SRAM 1 MEG X 1 SRAM 5 VOLT SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12,15,17, 20, 25 and 35 • High-performance, low-power, CMOS double-metal

Contextual Info: I^ I I C R O N 1 MEG 1 MEG X 1 SRAM PIN ASSIGNMENT Top View • High speed: 12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible

A15NC

Abstract: A19 marking A18 marking
Contextual Info: SRAM FT5C1001 L 1M x 1 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY A. SPECIFICATIONS • Comm, Ind, Mil Temp • MIL-STD-883 M5004 non-compliant-B A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC 32-Pin SOJ

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

micron sram

Abstract: 32-PIN MT5C1001 MT5C1008 MT5C1008DJ-20 SRAM 32 pin MT5C1008DJ20
Contextual Info: OBSOLETE MT5C1008 128K x 8 SRAM SRAM 128K x 8 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12, 15, 20 and 25 • Available in 300 mil- and 400 mil-wide SOJ packages • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

QML-38535

Abstract: 5962-92316
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add case outline T. Update boilerplate. Editorial changes 96-06-05 M. A. Frye Changes in accordance with NOR 5962-R139-98. 98-07-20 Raymond Monnin Dimensional corrections to case outlines Z and U. Updated

S18A

Contextual Info: MICRO N S E M I C O N D U C T O R INC b'lE T> m b l U S H 6 O D O T T l ? SIB • MRN AVAILABLE AUGUST 94 MICRON I S18A 1 MEG SRAM DIE SEMICONDUCTOR INC SRAM DIE 1 MEG SRAM 1 Meg X 1, 256K x 4 and 128K x 8 FEATURES DIE OUTLINE Top View) • • • • High speed: 12,15 and 20ns