MT4C1004J Search Results

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM |U|CRON 4 MEG x 1 DRAM DRAM 5V, STANDARD OR SELF REFRESH •n FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM (M IC R O N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages

Contextual Info: MICRON T E C H N O L O G Y INC 5SE J> • b l l l S M T 00041*10 fc.03 ■ MRN MT4C1004J 4 MEG X 1 DRAM MICRON DRAM 4 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM [MICRON 4 MEG DRAM X 1 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply

mt4c1004j

Abstract: MT4C1004
Contextual Info: MT4C1004J L 4 MEG X 1 DRAM (MICRON DRAM 4 MEG x 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and packages • High-performance C M O S silicon-gate process

MT4C1004

Contextual Info: M T4C1004J S 4 MEG X 1 DRAM (M IC R O N DRAM 4 MEG x 1 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (M T4C1004J S only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process

l992

Abstract: S992 T4C1004JDJ-6
Contextual Info: l^ iiC R MT4C1004J 4 MEG X 1 DRAM o r s j DRAM 4 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225m W active, typical

Contextual Info: MT4C1004J 4 MEG X 1 DRAM |U |IC = R O N 4 MEG X 1 DRAM DRAM DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical

MT4C1004J

Abstract: MT5C1005
Contextual Info: MT4C1004J MT5C1005 883C 4 MEG 256K xx 14 DRAM SRAM AUSTIN SEMICONDUCTOR, INC. DRAM 4 MEG x 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 FEATURES • Industry standard x1 pinout, timing, functions and

ds1015

Contextual Info: 4 MEG X 1 FPM DRAM l^ lld R O N MT4C1004J DRAM FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) o r 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and

mt4c1004j

Abstract: 4C1004 4c1004j
Contextual Info: MT4C1004J L 4 MEG X 1 DRAM |u iic = n o N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cy cie refresh d istrib u ted a cro ss 16m s (M T 4C 1004J) o r 128m s (M T 4C 1004J L only) • In d u stry-stan d ard p in o u t, tim ing , fu n ctio n s and

4c1004

Contextual Info: M IC R O N I MT4C1004J S 4 MEG X 1 DRAM •ZMCONDUCTÜR IM C 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (M T4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and

Contextual Info: OBSOLETE 4 MEG x 1 FPM DRAM MICRON I TECHNOLOGY, INC. M T4C 1004J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128m s (M T4C1004J L only) • Industry-standard pinout, tim ing, functions and packages • H igh-perform ance CM OS silicon-gate process

Contextual Info: MT4C1004J L 4 MEG X 1 DRAM [M IC R O N DRAM 4 MEG x 1 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH o 3D > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only) • Industry-standard x l pinout, tim ing, functions and

Contextual Info: MICRON SEMICONDUCTOR INC b3E T> • b 111S 4 =1 DDG7Sbñ 271 B U R N MT4C1004J L 4 MEG X 1 DRAM MICRON 4 MEG x 1 DRAM DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only)

MT4C1004

Contextual Info: MT4C1004J S 4 MEG X 1 DRAM |U|K=RON DRAM 4 MEG X 1 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (M T4C1004J) or 128ms (MT4C1004J S only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process

Contextual Info: AU ST IN S E M I C O N D U C T O R INC M i c r o büE J> • T G D 5 1 1 7 0 G G G 1 4 4 441 B I A U S T MT4C1004J 883C 4 MEG X 1 DRAM n -T - 4 4 'z v i 5 MILITARY DRAM 4 MEG X 1 DRAM FAST PAGE MODE DRAM AVAILABLE AS MILITARY SPECIFICATONS

MARKING PM5

Abstract: MT4C1004J MT4C1004JDJ-6 FPM DRAM MT4C1004 a10 marking
Contextual Info: OBSOLETE 4 MEG x 1 FPM DRAM MT4C1004J DRAM FEATURES • 1,024-cycle refresh distributed across 16ms MT4C1004J or 128ms (MT4C1004J L only) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

Contextual Info: MT8D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin single-in-line m emory module SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: M I CR ON T E C H N O L O G Y INC 5SE ]> bl 1 1 S 4 e} OQOMfcjfl? 332 MICRON • 4 MEG TtCHNOLOGV INC DRAM MODULE X 8 IURN MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE MT8D48 LOW POWER, EXTENDED REFRESH (MT8D48 L) FEATURES • Industry standard pinout in a 30-pin single-in-line

Contextual Info: PRELIMINARY M IC R O N I 4 MEG X SfcMCONOUCTORMC MT12D436 36, 8 MEG x 18 DRAM MODULE 4 MEG X 36, 8 MEG x 18 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access • Packages Leadless 7 2 -pin Leadless 7 2 -pin Leadless 7 2 -pin

Contextual Info: PRELIMINARY MICRON » j! MT24D836 8 MEG X 36, 16 MEG x 18 DRAM MODULE 8 MEG x 36,16 MEG x18 DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-perform ance CMOS silicon-gate process • Single 5V ±10% pow er supply

DM05

Contextual Info: ADVANCE MICRON I 4 MEG TECHNOLOGY. INC. X MT3D49 9 DRAM MODULE DRAM 4 MEG M O D I IL F IV IW L /U L t. 4 m e g a b y te , 5v, FAST PAGE MODE X 9 FEATURES OPTIONS PIN ASSIGNMENT Front View 30-Pin SIMM (DD-2) — / ~ ö~ Vcc CAS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3