MT12D436 Search Results

Contextual Info: PRELIMINARY M IC R O N I 4 MEG X SfcMCONOUCTORMC MT12D436 36, 8 MEG x 18 DRAM MODULE 4 MEG X 36, 8 MEG x 18 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access • Packages Leadless 7 2 -pin Leadless 7 2 -pin Leadless 7 2 -pin

Contextual Info: ADVANCE MICRON • 4 MEG DRAM MODULE 36, 8 MEG X X MT12D436 18 DRAM MODULE 4 MEG x 36, 8 MEG x 18 fastpagem ode FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-perform ance CM O S silicon-gate process • Low profile 1.00" height D M and DG packages only

Contextual Info: ADVANCE M IC R O N I m "“ 1 MT12D436 4 MEG X 36, 8 MEG X 18 DRAM MODULE 4 MEG X 36, 8 MEG 18 X FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply

micron dram module 72pin simm

Contextual Info: fl/lir -C a r -IM « MT12D436, MT24D836 4 MEG, 8 MEG x 36 DRAM MODULES DRAM 4 MEG, 8 MEG x 36 M 16, 321 16 ’ 3 2 M EG A BY T E’ 5 V ’ FA ST PAGE MODE O D U L E FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,

U1-U12

Abstract: U9-U12 MT12D436 MT24D836 U17-U24
Contextual Info: OBSOLETE 4, 8 MEG x 36 PARITY DRAM SIMMs MT12D436 MT24D836 DRAM MODULE FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module SIMM • 16MB (4 Meg x 36) and 32MB (8 Meg x 36) parity versions • High-performance CMOS silicon-gate process

MT12D436

Abstract: MT24D836
Contextual Info: MT12D436, MT24D836 4 MEG, 8 MEG x 36 DRAM MODULES TECHNOLOGY, INC. 4 MEG, 8 MEG x 36 DRAM MODULE 16, 32 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process

Contextual Info: 4’8 M E Gx36 MICRON I PARITY DRAM SIMMs TECHNOLOGY, INC. MT12D436 MT24D836 DRAM MODULE FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module SIMM • 16MB (4 Meg x 36) and 32MB (8 Meg x 36) parity versions • High-performance CMOS silicon-gate process

DM-45

Contextual Info: PRELIMINARY MT12D436 S , MT24D836(S) 4 MEG, 8 MEG x 36 DRAM MODULES MICRON I TECHNOLOGY. INC 4 MEG, 8 MEG x 36 DRAM MODULE 16, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JE D E C - an d in d u stry -stan d ard pin o u t in a 72-pin ,

Contextual Info: 4, 8 MEG X 36 PARITY DRAM SIMMs MICRON I TECHNOLOGY. INC. QRAM LSI l i b i v i MODULE MT12D436 MT24D836 FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module SIMM • 16MB (4 Meg x 36) and 32MB (8 Meg x 36) parity versions

Contextual Info: MICRON TECHNOLOGY I NC ADVANCE I M IC R O N MT12D436 4 MEG X 36, 8 MEG x 18 DRAM MODULE SSE D • b i l l 5 4 =5 0 0 0 ^ 2 ^ 4Ô3 ■ URN _ 4 MEG x 36, 8 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process

Contextual Info: ADVANCE MICRON 1 4 MEG DRAM •MODULE 36, 8 MEG X 4 MEG X X MT12D436 18 DRAM MODULE 36, 8 MEG 18 X FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Low profile 1.00" height DM and DG packages only

Contextual Info: MT12D436, MT24D836 4 MEG, 8 MEG x 36 DRAM MODULES [M IC R O N 4 MEG, 8 MEG x 36 DRAM MODULE 16, 32 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JE D E C - and in d u stry-stan d ard p in o u t in a 72-pin , sin g le-in -lin e m em o ry m o d u le (SIM M )

MAX77100

Contextual Info: ADVANCE M IC R O N I 4 MEG X 36. 8 MEG X MT12D436 18 DRAM M ODULE 4 MEG X 36, 8 MEG X 18 DRAM MODULE NEW I FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM (T-21) M T iTmTfimfnTmTirrmTiTrmTn MARKING • Timing 60ns access 70ns access 80ns access

HYM536410AM70

Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Contextual Info: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices

WTS 1.7 IC 28 PIN

Abstract: WTS 1.7 IC
Contextual Info: PRELIMINARY M IC R O N I 4 MEG X 36, 8 MEG 4 MEG DRAM MODULE X X M T12D 436 18 DRAM M OD ULE 36, 8 MEG X 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 1 2 D 4 3 6 D M /G m r r n m r rm m T m SIMM SIM M (gold) SIM M low profile SIM M (gold) low profile

MT41LC256K32D4

Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
Contextual Info: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏