C1994 Search Results

Contextual Info: ADVANCE .1 MT28LF400 256K x 16, 512K x 8 FLASH MEMORY MICRON •- OUAMTUU o c v tc s a . INC 256K x 16, 512K x 8 3.3V/12V, BOOT BLOCK FEATURES • Seven erase blocks: - 16K B /8K -w ord boot block protected - T w o 8K B/ 4K -w ord param eter blocks - Four general m em ory blocks

C1994

Contextual Info: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible

Contextual Info: PRELIMINARY MT4LC4007J S 1 MEG X 4 DRAM DRAM 1 MEG x 4 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • • Single +3.3V ±0.3V power supply Low power, 250|xW standby; lOOmW active, typical JEDEC-standard pinout and packages

Contextual Info: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages

Contextual Info: 1 PRELIMINARY M IC R O N • 8 MEG X StMlCOMCUCTOR. INC MT16D832 32,16 MEG x 16 DRAM MODULE 8 MEG x 32,16 MEG X16 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 Packages Leadless 72-pin SIMM Leadless 7 2 -pin SIMM gold

MT4C4M4

Contextual Info: 1» PRELIMINARY MICRON I 4 MEG SEIUCOMXJCTOA INC. X MT2D48 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

Contextual Info: PRELIMINARY M IC R O N I 4 MEG X SfcMCONOUCTORMC MT12D436 36, 8 MEG x 18 DRAM MODULE 4 MEG X 36, 8 MEG x 18 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access • Packages Leadless 7 2 -pin Leadless 7 2 -pin Leadless 7 2 -pin

MT16C

Contextual Info: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: ADVANCED M IC R O N I MT58LC64K36B2 64Kx:36 SYNCBURST’* SRAM SYNCHRONOUS SRAM 64K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns

mt43c4257adj7

Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Contextual Info: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM

Micron Quantum Devices

Abstract: LF400
Contextual Info: ADVANCE M IC R O N I ” MT28LF400 256K x 16. 512K X 8 FLASH MEMORY 256K x 16 , 512K X 8 3.3V/12V, BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: - 16KB/ 8K-word boot block (protected) - Two 8KB/4K-word parameter blocks - Four general memory blocks

Contextual Info: PRELIMINARY M IC R Q IM 1 MT8D88C132/432 S , MT16D88C232/832(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM CARD 4,8,16, 32 MEGABYTES 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • • • • • PIN ASSIGNMENT (End View)

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

TPS5117

Abstract: Toko 10mm WPC8763L NVIDIA G84 C1740 C2068 stac9228x5 C2073 2 webcam Schematic Diagram 0735A
Contextual Info: A B C D E CPU DC/DC Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 ISL6262A Project code : 91.4W1001.001 PCB P/N : 48.4W101.0SA Revision : 07212-SA Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz CRT LCD RGB CRT 17 51 GDDRIII 700MHz LVDS 18 HDMI 16

Contextual Info: NI CR ON S F 1 I C C N D U C T O R INC blllS'-H Ü 0 1 0 0 Q Ü 5 b^ • URN bTE i MICRON I M T4 D 51232 5 12 K X 3 2 D R A M M O D U L E sem iconductorm e. DRAM MODULE 512K x 32 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line

BCM 6302

Abstract: micron MT4C database for 4081 ic
Contextual Info: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.

Contextual Info: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector

ic 7442

Abstract: 7442 ic 7442
Contextual Info: 16 MEG DRAM DHE DRAM DIE 16 MEG DRAM M T4C 4M 4B 1D 21A FEATURES DIE OUTLINE Top View Single 5.0V pow er supply Industry-standard x4 timing and functions H igh-perform ance CMOS silicon-gate process All inputs and outputs are TTL- and CM OS-com patible Refresh m odes: RAS"ONLY, CAS‘- BEFO RE-RA S(CBR),

Contextual Info: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase

Contextual Info: ADVANCE M IC R O N I ii^ n w r w MT16LD T 164(S) ! MEG x 64 DRAM MODULE 1 MEG x 64 DRAM 3.3V, OPTIONAL EXTENDED REFRESH, SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • H igh-perform ance CMOS silicon-gate process

Contextual Info: ADVANCE MT4LC1M16C3 S 1 MEG X 16 DRAM M IC R O N I SEMICONDUCTOR ÍMC DRAM 1 M E G x 1 6 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process

Contextual Info: PRELIMINARY lUKir—d a flM | hi — MT8D88C132H/432H S , MT16D88C232H/832H(S) 4 M B ^ 8 M B j 1 6 M B j 3 2 M B DRAR/| C A R D S DRAM MINICARD 8,16,32 megabytes 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • •

T2D19

Contextual Info: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM