16DRAM Search Results

Contextual Info: ADVANCE MT4 L C1M16C3/5/6/7 S 1 MEG X 16 WIDE DRAM MICRON WIDE DRAM 1 MEG 16DRAM X 5.0V SELF REFRESH (MT4C1M16C3/5/6/7 S) 3.0/3.3V, SELF REFRESH (MT4LC1M16C3/5/6/7 S) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Timing 60ns access 70ns access 80ns access

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: ADVANCE MT4C1 M16C3 1 MEG X 16 DRAM |U|f=RClN DRAM 1 MEGx 16DRAM 2 5V, FAST PAGE MODE PIN ASSIGNMENT Top View • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply

M5M410092AFP-13

Abstract: M5M410092BRF-10 16SRAM 100P6S M5M4V4169CTP-15 m5m410092
Contextual Info: 3 »jam w jiiM ^Kiaaw iaw •CACHED DYNAMIC RAMs Classification Memory capacity 4M Memory Configuration 256KX 16DRAM IKX16SRAM Cached Dynamic RAM 16M 16DRAM 1K X 16SRAM Min. Cycle time fisi ■ Typ. power dissipation (mW - Package Outline Type No. 10

Contextual Info: ADVANCE 1 MEGx 16DRAM DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT Top View • JEDEC- a n d industry-standard x l6 tim ing, functions, pinouts a n d packages • H igh-perform ance CMOS silicon-gate process • Single pow er supply: +3.3V ±0.3V

Contextual Info: ADVANCE MT4 L C1M16C3/5/6/7 1 MEG X 16 WIDE DRAM I^IC ZR O IM WIDE DRAM 1 MEG 16DRAM X 5.0V FAST-PAGE-MODE (MT4C1M16C3/5/6/7) 3.0/3.3V, FÂST-PAGE-MODE (MT4LC1M16C3/5/6/7) FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

78D015

Contextual Info: MT4C1670/1 64K X 16 DRAM | V | IC = R O N DRAM 64K x 16DRAM STATIC COLUMN MODE FEATURES PIN ASSIGNMENT Top View • Ind u stry sta n d a rd x l 6 p in o u ts, tim ing , fu n ctio n s and p ackages • • • • • • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess

Contextual Info: ADVANCE MT4 L C1 M16CX S 1 MEG X 16 DRAM M IC R O N 1 MEG DRAM 16DRAM m X 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES • Timing 60ns access 70ns access 80ns access 42-Pin SOJ (Q-7) Vcc Í 1 42 ] Vss DQ1 I 2 41 ] DQ16 DQ2 { 3

Contextual Info: PlICRON SEMICONDUCTOR INC b3E D WÊ blllSMT QODflbSM SSS W M R N MICRON I MT 4C16256/7/8/9 256K X 16 WIDE DRAM SEMICONDUCTOR MC WIDE DRAM 256Kx 16DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: 4M x 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

5118160

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

5118160

Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Contextual Info: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJ-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJL-50/-60/-70 Preliminary Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

Contextual Info: EPSON PF765-02 _ SPC8104F Low Voltage VGA LCD Controller • DESCRIPTION The SPC8104 is a low power, mixed voltage video controller based on VGA architecture and optimized for driving a 640x480 LCD panel display. VGA standard mode functionality is supported using standard IBM VGA

Q67100-Q727

Abstract: 16-DRAM
Contextual Info: 256K x 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: SIEMENS HYB 314171BJ-50/-60/-70 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJL-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Preliminary Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating tem perature

Contextual Info: SIEM ENS 1 M X 1 6 - B it D y n a m ic R A M H Y B 5 1 1 8 1 6 0 B S J -5 0 /-6 0 /-7 0 1 k -R e fre s h A d v a n c e d In fo rm a tio n • 1 04 8 57 6 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

SIEMENS tle 420

Abstract: ic 7014
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

5118160

Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Contextual Info: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20

SIEMENS BST

Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70

Contextual Info: 256 K x 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

vt1631

Abstract: vt8237r VT8233 VT1632A STR W 5453 C vt8237 VT6103 VT8237R PLUS via vt8237R Plus chipset south bridge STR W 5453 A
Contextual Info: Data Sheet CN333 North Bridge with Integrated UniChrome Pro 3D / 2D Graphics Controller Revision 1.0 January 5, 2005 VIA TECHNOLOGIES, INC. Copyright Notice: Copyright 2004-2005, VIA Technologies Incorporated. All Rights Reserved. No part of this document may be reproduced, transmitted,