BLLL541 Search Results
BLLL541 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MICRON I 64K TECHNOLOGY, INC. SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT PIN ASSIGNMENT Top View • • • • • • • • Fast access times: 4 .5 ,5 ,6 and 7ns Fast OE# access times: 4 .5 ,5 and 6ns Single +3.3V +10% /-5% power supply |
OCR Scan |
mt58lc64k16/18d8 | |
C1994Contextual Info: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible |
OCR Scan |
mt20d84072-pin030mw048-cycle+6 | |
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Contextual Info: ADVANCE 4 MEG X 64 DRAM SODIMM M IC R O N I TF.CHNOLOOY, INC. SMALL-OUTLINE DRAM MODULE MT4LDT464H X S FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-stand ard pinout in a 144-pin, sm all-outline, dual in-line m em ory m odule (DIMM) • 32MB (4 M eg x 64) |
OCR Scan |
mt4ldt464h144-pin096-cycle256ms | |
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Contextual Info: M I ir S n M MT58LC32K32/36B3 32K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 and 11ns |
OCR Scan |
mt58lc32k32/36b3100-pinmt50lc32k32/36b3 | |
MT16D832-6/7Contextual Info: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM) |
OCR Scan |
mt8d432mt16d83272-pin448mw+2 | |
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Contextual Info: MICRON I MT4C4M4E9 S 4 MEG X 4 DRAM TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply |
OCR Scan |
220mw096-cycle128ms | |
MT4C1670Contextual Info: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages |
OCR Scan |
dd0hs21mt4c1670/1mt4c1670mt4c1671+2 | |
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Contextual Info: ADVANCE MT4LC4M16K2/F5 4 MEG X 16 DRAM |U|ICRON X 16 DRAM 3.3V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard xl6 pinout, timing, functions and packages • 13 row-addresses, 9 column-addresses (K2) or |
OCR Scan |
mt4lc4m16k2/f5096-cycle50-pinq013411 | |
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Contextual Info: PRELIMINARY M IC R O N 1 — - 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM MT41LC256K32D4 SGRAM FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle |
OCR Scan |
mt41lc256k32d4024-cycle100-pinblll541 | |
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Contextual Info: ADVANCE M IC R O N MT28SF002 256K x 8 FLASH MEMORY I FLASH MEMORY 256K x 8 S m a rtV o lta g e , FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 2|oA at |
OCR Scan |
mt28sf002100ns110ns150ns+1 | |
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Contextual Info: MT58LC64K18C4 64K X 18 SYNCBURST SRAM M IC R O N SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access time: 5 and 6ns |
OCR Scan |
mt58lc64k18c4hi069160-pin | |
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Contextual Info: MT4C1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) o r 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and |
OCR Scan |
mt4c1004j024-cycle128ms225mw | |
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Contextual Info: blUSHÌ 0010113 OTñ n RN M IC R O N I MT43C8128A/9A 128K X 8 TRIPLE-PORT DRAM SEViCONDUCtCR ISC. 128K x 8 DRAM WITH DUAL 256 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports |
OCR Scan |
mt43c8128a/9a512-cycle | |
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Contextual Info: 4 MEG 5E MiCONOUCTOR. INC X 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line package • H igh-perform ance CMOS silicon-gate process • Single 5V ±10% pow er supply • All device pins are TTL-compatible |
OCR Scan |
30-pin800mw024-cyclemt8d48m-6+3 | |
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T9049
Abstract: A7005 MT9D49M-6
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OCR Scan |
30-pin025mw024-cyclemt9d49+4 | |
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Contextual Info: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 • |
OCR Scan |
000177bmt42c406424l/400vcqc12+1 | |
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Contextual Info: ADVANCE “ £8M 8P 4/C2 8^ M E G x 8 D R A M MICRON I DRAM 8 MEG x 8 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing functions and packages • 13 row-addresses, 10 column-addresses P4 or |
OCR Scan |
096-cycle34-pin0g11227 | |
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Contextual Info: PRELIMINARY MICRON 4 MEG x 16 EDO DRAM I MT4LC4M16R6 DRAM FEATURES PIN ASSIGNMENT Top View OPTIONS 50-Pin TSOP (DB-7) Vcc DQ1 DQ2 DQ3 DQ4 Vcc DQ5 DQ6 DQ7 DQ8 NC Vcc WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 Vcc MARKING • Package Plastic TSOP (400 mil) TG |
OCR Scan |
mt4lc4m16r650-pinmt4lc4m16r6tg-5104ns | |