000177B Search Results
000177B Price and Stock
Skyworks Solutions Inc 544BBCB000177BCGOSCILLATOR SMD |
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Skyworks Solutions Inc 549BCAC000177BBGXTAL OSCILLATOR |
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Skyworks Solutions Inc 544BBCB000177BBGXTAL OSCILLATOR |
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544BBCB000177BBG | 267 |
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Skyworks Solutions Inc 544BBCB000177BCGROSCILLATOR SMD |
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544BBCB000177BCGR | 250 |
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544BBCB000177BCGR |
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544BBCB000177BCGR | 65 | 1 |
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Skyworks Solutions Inc 549BCAC000177BBGRXTAL OSCILLATOR |
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549BCAC000177BBGR | Reel | 250 |
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000177B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 • |
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000177b MT42C4064 24L/400 VcqC12 MIL-STD-883 | |
TR-NPL-000275
Abstract: CHN 703 AT324 M-986-1R2 R2B marking code M-986-1R1 M-986-2R2 T3R marking
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M-986-1R2 M-986-1R2 M-986-2R2 M-986-1R1 M-986 22121-20lh 32HMS M-986-R2 TR-NPL-000275 CHN 703 AT324 R2B marking code T3R marking | |
Contextual Info: bq2003 BENCHMARQ Fast Charge 1C Features General Description >• Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a |
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bq2003 bq2003 16-pin | |
Contextual Info: TT M/HITE M IC R O ELEC T R O N IC S 4Mx4 CMOS FPM Dynamic RAM WPD4M4-70TSX PRELIM IN A RY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 70ns (Max) PIN CONFIGURATION ■ Power Supply: 5V ±0.5V 300 M IL T S O P II ■ Packaging < o o □_ TOP VIEW |
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WPD4M4-70TSX | |
Siemens STU2
Abstract: BTS721L1 diode marking code 4n replace bts721l1 BTS721L1 equivalent
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23SL05 BTS721L1 P-DSO-20-9 Q67OG0 S7002-A2 L2J20 Siemens STU2 BTS721L1 diode marking code 4n replace bts721l1 BTS721L1 equivalent | |
Contextual Info: MF TRUNK RECEIVERS & TRANSMITTERS M -986-1R2 & -2R2 MF Transceivers Teltone M-986-1R2 and -2R2 M FC Transceivers contain all the logic necessary to transmit and receive C G T T R2F forward and R2B (backward) multifrequency signals on one integrated circuit (IC). M -986-1R2 is a single-channel ver |
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-986-1R2 M-986-1R2 -986-1R2 M-986-2R2 M-986-1R1 M-986 22121-20lh 22121-20th | |
Q3236I20N
Abstract: Q3036 Q3216 Qualcomm q3216 q32361 Q3236I-20N 213-044-602 q3236i Q3236 Q32361-20N
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Q3236 Q3036 Q3216PLL 100333b Q3236I20N Q3216 Qualcomm q3216 q32361 Q3236I-20N 213-044-602 q3236i Q3236 Q32361-20N | |
VF-8X
Abstract: 2N4206 2N4205 SCR 2N4204 thyristor handbook circuits re200 372a thyristor handbook W1000 2N4199
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DDD1773 MIL-S-19500/372A 2N4199 2N4206 DD01774 1970ucts 5961-A117 VF-8X 2N4206 2N4205 SCR 2N4204 thyristor handbook circuits re200 372a thyristor handbook W1000 | |
Contextual Info: TS 8368 BIPOLAR HIGH-SPEED 8-BIT FLASH A/D CONVERTER DESCRIPTION The TS8368 is a m onolithic bipolar 8-bit parallel flash analog-to-digital converter designed for applications requi ring very high-speed conversion. The TS 8368 uses 256 parallel comparators to digitize fast |
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TS8368 i02ba75 000177b 0D01777 DDD177fl | |
Contextual Info: FEA TU RES 10 Series • Ideal for current sensing applications. • 1% Tolerance standard, others available. • Fixed resistance measuring point “M”. • Low inductance non-inductive below .25Q . Lo-Mite Molded Silicone Axial Lead Wire Elem ent R esistors |
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15FR010 12FR015 13FR015 12FR020 13FR020 15FR015 15FR020 12FR025 13FR025 15FR025 | |
hard disk 1TB CIRCUIT
Abstract: FDC37
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FDC37C665IR FDC37C666IR FDC37C665LV GDGT77T hard disk 1TB CIRCUIT FDC37 | |
Contextual Info: H igh perfo rm an ce 8 M egabit 3V CMOS Flash EEPROM . AS29LV008 II A 8 M eg ab it C M O S F la sh E P R O M Advance inform ation Features • Organization: 1M x 8 • Sector architecture - O ne 16K; tw o 8 • L o w p o w e r c o n s u m p t io n - 10 m A typical re a d c u rre n t |
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AS29LV008 programmiAS29LV008-100TC AS29LV008-100TI AS29LV008-120TC AS29LV008-120TI AS29LV008-150TC AS29LV008-1S0TI AS29LV008-80SC AS29LV 008-100SC | |
PS 9808
Abstract: DDD1773 QDD177M "optical electronics"
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D0D177a 800V/AiSec 100mA PS 9808 DDD1773 QDD177M "optical electronics" | |
11DQ05
Abstract: 11DQ06 50A60V
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11DQ05 11DQ06 11DQ05 bl5123 bbl5123 000177b 11DQ06 50A60V | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR HYM591000B Seríes 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is |
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HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1-274/-0-0ai 29MAX. | |
PS 9808
Abstract: DDD1773 QDD177M "optical electronics" 9808
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D0D177a 800V/AiSec 100mA PS 9808 DDD1773 QDD177M "optical electronics" 9808 | |
Contextual Info: SCHOTTKY BARRIER DIODE 11DQ05 11DQ06 1.1A/50~60V FEATURES • Miniature Size ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability • 30 Volts through 100 Volts Types Available • 52mm Inside Tape Spacing Package Available |
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11DQ05 11DQ06 11DQ05 000177b | |
brush dc motor speed control
Abstract: brushless dc motor speed control Hall ericsson tn PBM3961N 120 V dc motor drive circuit application PBM39 ericsson pwm
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3373bà D00177M PBM3961 PBM3961N brush dc motor speed control brushless dc motor speed control Hall ericsson tn PBM3961N 120 V dc motor drive circuit application PBM39 ericsson pwm |