AS29LV Search Results

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

29LV800-90

Abstract: 29LV800-70R 29LV8008 AS29LV800
Contextual Info: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)

29LV8008

Abstract: a6ll AS29LV800T 29LV800-90
Contextual Info: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts

Contextual Info: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation

AS29LV016

Contextual Info: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS „ Commercial Off The Shelf, up-screened device

Contextual Info: Preliminary information •■ AS29LV008 A 3V 1 M x 8 C M O S Flash EEPROM Features • Organization: 1M x 8 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - Boot code sector architecture— T top or B (bottom) - &ase any combination o f sectors or full chip

Contextual Info: Preliminary information •■ AS29LV008 II 3V 1Mx 8 CMOS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d fifte e n 64K b y te secto rs - B oot c o d e se c to r a rc h ite c tu re — T top o r B (b o tto m )

29lv400

Abstract: 29LV400-120 29LV400-90 AS29LV400
Contextual Info: AS29LV400 Preliminary Information March 2001 3V 512K x 8/256K x 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts

TSOP1-48

Contextual Info: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS Single Power Supply Operation

29LVS00

Abstract: 29LV800 AS29 AS29LV800 LI400
Contextual Info: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

Device-List

Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Contextual Info: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera

29LV008

Abstract: 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI
Contextual Info: H ig h p e rfo rm a n c e 8 M egabit 3V CMOS Flash EEPROM AS29LV008 II A 8 Megabit CMOS FJüsh EPRO M Advance information Features • Organization: 1M x 8 • Sector architecture • Low pow er consumption - 10 m A typical re a d c u rre n t - 3 0 m A typical p ro g ra m c u rre n t

Flash

Abstract: AS29LV016 S29LV016
Contextual Info: COTS PEM BOOT SECTOR FLASH AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS High performance — Access times as fast as 70 ns @ Enhanced Temp [/ET] Commercial Off The Shelf, up-screened device

Contextual Info: Preliminary information •■ AS29LV002 3V 256Kx8 CMOS Flash EE PROM Features • O rganization: 256K x8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

Contextual Info: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture

Contextual Info: H igh perfo rm an ce 8 M egabit 3V CMOS Flash EEPROM . AS29LV008 II A 8 M eg ab it C M O S F la sh E P R O M Advance inform ation Features • Organization: 1M x 8 • Sector architecture - O ne 16K; tw o 8 • L o w p o w e r c o n s u m p t io n - 10 m A typical re a d c u rre n t

Contextual Info: H igh p erform ance 256KX8 3V CMOS Flash EEPROM H AS29LV002 A 2S6KX8 CMOS Flash EEPROM Prelim inary inform ation Features • O rg a n iz a tio n : 256 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top o r B (bottom )

39SF020A

Abstract: 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ
Contextual Info: Labtool-148C Version 3.30 <ALL> Device List ACTRANS AC29LV400B *44PS AC29LV400B *48TS ALi M6759 *44 M8720 Page 1 of 13 AC29LV400T *44PS AC29LV400T *48TS Alliance AS29F040 AS29LV400T *48TS AS29LV800T *48TS AS29LV400B *44PS AS29LV800B *44PS AS29LV400B *48TS

atc 93lc46

Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
Contextual Info: LabTool-48XP Version 5.60 <ALL> Device List Page 1 of 23 ACTRANS AC29LV400B *44PS AC39VF080 *40TS AC29LV400B *48TS AC39VF088 *48TS AC29LV400T *44PS AC39VF800 *48TS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV400B *48TS

TSOP1-48

Abstract: AS29LV016JTRGR-70/XT
Contextual Info: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single Power Supply Operation – Full voltage range: 2.7 to 3.6 volt read and write operations for

Contextual Info: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation

29LV800-90

Abstract: 29LV800 AS29LV800
Contextual Info: Advanced Information AS29LV800 October 2000 3V 1Mx8/512K×16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors

A1217

Abstract: 29LV400-90
Contextual Info: AS29LV400 Preliminary Information July 2001 3V 512K x 8/256K x 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts