AS29 Search Results

SN74LVC541A

Contextual Info: SN74LVC541A OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SC AS298D - JANUARY 1993 - R E V IS E D JANUARY 1997 • EPIC Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C •

LVC541A

Abstract: SN54LVC541A SN74LVC541A
Contextual Info: SN54LVC541A, SN74LVC541A OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS S C AS298G - JA N U A R Y 1993 - R EVISED JA N U A R Y 1998 D EP/C Enhanced-Performance Implanted CMOS Submicron Process D Typical V q l p (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

as2930

Abstract: 3V REGULATOR 312 TO92 LM2931-5.0 as2930M lm2931-5 LM2930 LM29315 339 3PIN
Contextual Info: AS2930 150 mA Low Dropout Voltage Regulator FEATURES APPLICATIONS • Output Current in Excess of 150mA • 3V, 3.3V, 3.5V, 4.0V, 4.5V & 5.0V Versions Available • Very Low Quiescent Current • Input-Output Differential Less than 0.6V • 60V Load Dump Protection

icl7071

Abstract: LM317 B1588 lm317 to92 ka3842 equivalent mc3842 ka3842 equivalent uc3842 B1115 LM317 sot23 mc3843a
Contextual Info: MANF. BAY Alpha Semi AS1115 AS1117 AS1580 AS1581 AS1582 AS1583 AS2431 AS2810 AS2815 AS2830 AS2850 AS2880 AS2930 AS2931 AS2950 AS2951 AS431 TL431 AS431C AS432 LP2950 LP2951 B1115 B1117 B1580 B1581 B1582 B1583 B3431 B1117 B1586 B1587 B1585 B1584 LM2930 LM2931

Contextual Info: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

29F002

Abstract: A1317 AS29F002B-120SC
Contextual Info: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

Contextual Info: FLASH AS29F040 Austin Semiconductor, Inc. 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5

smd diode marking a4h

Abstract: 32-PIN AS29F040 5962-9669203HUA
Contextual Info: FLASH AS29F040 Austin Semiconductor, Inc. 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5

29LV800-90

Abstract: 29LV800-70R 29LV8008 AS29LV800
Contextual Info: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)

smd diode marking a4h

Abstract: 5962-9669204HUA AS29F040ECA a4h smd AS29F040 cross reference SMD MARKING CODE A12 32-PIN AS29F040 5962-9669204H
Contextual Info: FLASH AS29F040 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2

29LV8008

Abstract: a6ll AS29LV800T 29LV800-90
Contextual Info: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts

A1317

Abstract: AS29 120PI
Contextual Info: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )

29f200-90

Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
Contextual Info: H igh Performance 256K x8/128 « I6 X AS29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs

AS29F010

Abstract: Flash 32-PIN 5962-9669002HYA as29f010cw-70
Contextual Info: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7

AS29372

Abstract: laptop battery diagram schematic laptop battery schematic
Contextual Info: Voltage Regulator AS29372 LOW-DROPOUT VOLTAGE REGULATOR PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS 7 Lead Flatpack (F) MIL-STD-883, Class B para 1.2.2 compliant GND 1 FEATURES High output voltage accuracy Guaranteed 750mA output Low quiescent current

1702 eprom programmer

Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Contextual Info: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current

29f400

Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
Contextual Info: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current

Contextual Info: COTS PEM BOOT SECTOR FLASH AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation

as2954bp

Abstract: AS2954B AS2954BS AS2954BN
Contextual Info: ro e • m alph a f SEMICONDUCTOR AS2954 Excellence in Analog Power Products 250 mA Low Drop Out Voltage Regulator FEATURES APPLICATIONS • • • • • • • AS2954 Version Over LP2954 • • • • • • • • • • Error Flag Warns O f Output Dropout

AS2951

Abstract: AS2950 J2N5432 as2951acp Alpha As2950
Contextual Info: ALPHA SEMICONDUCTOR AS2950/AS2951 E x cellence in A nalog Pow er P roducts 150 mA Low Dropout Voltage Regulators FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • 5.0V ,3.3V , A n d 3.0V V ersions A t 150 m A O utput

as2930

Abstract: as2930M Alpha As2930
Contextual Info: ALPHA H V . M SEMICONDUCTOR AS2930 Excellence in Analog Power Products 150 mA Low Dropout Voltage Regulator FEATURES APPLICATIONS • Output current in excess o f 150 mA • 5V, 3V, 3.3, 3.5, 4.0,4.5 versions available • Very low quiescent current • Input-output differential less than 0.6V

AS29LV016

Contextual Info: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS „ Commercial Off The Shelf, up-screened device