AS29F010 Search Results

AS29F010

Abstract: Flash 32-PIN 5962-9669002HYA as29f010cw-70
Contextual Info: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7

Contextual Info: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors

smd a5

Abstract: AS29F010D
Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

32-PIN

Abstract: AS29F010
Contextual Info: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7

7 segment display 5611

Abstract: 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70
Contextual Info: High Performance 128Kx8 CMOS Flash EEPROM AS29F010 AS29F011 5V 128K×8 CMOS Flash Memory FEATURES • Organization:131,072 words × 8 bits • JEDEC standard write cycle commands • Sector Erase architecture – protects data from accidental changes – Four 32K × 8 sectors

3d graphics

Contextual Info: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237

Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

32-PIN

Abstract: AS29F010
Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

32-PIN

Abstract: AS29F010 5962-9669002HYA
Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY AVAILABLE AS MILITARY SPECIFICATIONS 32-PIN Ceramic DIP (CW) • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1

smd transistor SA4

Abstract: 32-PIN AS29F010
Contextual Info: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

27c eeprom

Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
Contextual Info: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

15A16

Abstract: S29F010
Contextual Info: Features • O rganization: 12 8K x 8 bits • JEDEC standard w rite cycle com m ands • Sector Erase architecture - Four 32K x 8 sectors • Single 5 . 0 ± 0 .5 V pow er supply for read /w rite operations • Program /erase cycle end signals: - protects data from accidental changes

Contextual Info: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e

1N3064

Abstract: AS29F010 AS29F010-120LC AS29F010-120PC AS29F010-120TC AS29F010-150LC AS29F010-150PC
Contextual Info: # $65< 343 89#45;.ð;#&026#)ODVK# 3520 )HDWXUHV • Organization: 128K x 8 bits • Sector Erase architecture - Four 32K × 8 sectors • Single 5.0±0.5V power supply for read/write operations • High speed 120/150 ns address access time • Low power consumption:

1N3064

Abstract: AS29F010 AS29F010-120LC AS29F010-120PC AS29F010-120TC AS29F010-150LC AS29F010-150PC
Contextual Info: # $65< 343 89#45;.ð;#&026#)ODVK# 3520 )HDWXUHV • Organization: 128K x 8 bits • Sector Erase architecture - Four 32K × 8 sectors • Single 5.0±0.5V power supply for read/write operations • High speed 120/150 ns address access time • Low power consumption:

PH29EE010

Abstract: d27c010a NEC D2732 16FA03 Siemens M812 N87C51 M5M28F102AJ-XX m824 m5m28f102avp D8752BH
Contextual Info: P800 Device Support List Version 1.0 Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K. Tel +44 1707 332148 Fax +44 1707 371503 sales@stag.co.uk techsupport@stag.co.uk

Device-List

Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

29f010 PLCC

Abstract: 29F010 DIP 29F010 AS29F010 AL124 52HA
Contextual Info: Il i^l i IVI f I [ n.i in i- BB A S / ‘> 1 0 I 0 A I / K K x K S V C M O S I ì.isli I I I’ K O M I > N k X ,X C M O S Mi i s l i I I I ' H O M Features • JEDEC standard w rite cycle com m ands - protects data from accidental changes • P rogram /erase cycle end signals:

AS27C256-20JM

Abstract: WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB WF1M32B-120G2UM3 IDT71256L25TCB AS5C2008 AS8S512K32Q 57C256F-55
Contextual Info: Part Number 1 of 66 Config Device Type Volt Packages Micross Part Number SMD 5962- 57C256F-55 32Kx8 UVEPROM 5V 57C256F-55 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V ACT-E128K32C120P7Q 128Kx32 EEPROM 5V ACT-E128K32C140P7Q 128Kx32 EEPROM 5V