AS4C1M16E0 Search Results

AS4C1M16F5-60JC

Abstract: AS4C1M16F5-60JI AS4C1M16F5 AS4C1M16F5-60tc
Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

1m16e

Contextual Info: AS4C1M16F5 5V 1Mx16 CMOS DRAM fast-page mode Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16E0-60)

Contextual Info: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0

4lc4m4e0

Contextual Info: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed

T835

Contextual Info: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e

Contextual Info: 3UHOLPLQDU\LQIRUPDWLRQ $6&0  90ð&026'5$0 IDVWSDJHPRGH )HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ

4LC1M16

Abstract: 4C1M16 AS4CIM16 IS3015
Contextual Info: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ

Contextual Info: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0

Contextual Info: Preliminary information •■ AS4C1M 16F5 A 5V 1M x 16 C M O S DRAM fast page mode Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1,048 ,5 7 6 w ords x 16 bits • H igh speed - KAS-only or CAS-before-KAS refresh • R ead-m odify-w rite

3d graphics

Contextual Info: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237

4C1M16

Abstract: 1MX16 4LC1M16
Contextual Info: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout