29F002 Search Results

M29F002

Abstract: M29F002B M29F002T PDIP32 PLCC32 TSOP32 HFNC
Contextual Info: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29F002T 29F002B 2 Mb x8, Block Erase SIN G LE SUPPLY FLASH M EM O RY • 5V ± 1 0 % SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1 0 |iS typical

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON M 29F002T k7 #» RitlDÊlMIlilLIKËinSMQtÊS 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

M29F002T

Abstract: PDIP32 PLCC32
Contextual Info: w - SCS-THOMSON k7 # . IM [MDiHI ènnMPM]D(§Ii M 29F002T 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

IC 555 architecture

Contextual Info: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29F002

Abstract: A1317 AS29F002B-120SC
Contextual Info: High Performance 256Kx8 5V CMOS Flash EEPROM 29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT 29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

29053

Contextual Info: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

XX02H

Abstract: 29F002T FHD 100 D
Contextual Info: CAT29FN002 Advance Information Advance Information CAT29FN002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES • 100,000 Program/Erase Cycles and 10 Year ■ Fast Read Access Time: 90/120 ns Data Retention ■ Sectored Architecture: ■ End of Program/Erase Cycle Detection

Contextual Info: — 29F002NT/29F002NB AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

A1317

Abstract: AS29 120PI
Contextual Info: Preliminary information •■ 29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )

ITT 435

Abstract: .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI
Contextual Info: « H ig h p e rfo rm a n ce 256K X 8 5 V CMOS Flash EEPROM 29F002 A 2J>6Kx8 CMOS Flash EEPROM Prelim inary inform ation Features • O r g a n iz a tio n : 2 5 6 K x 8 • S e c to r a r c h ite c tu r e - O n e 16K; tw o 8K; o n e 32K ; a n d th re e 64K b y te secto rs

Contextual Info: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

P55i

Contextual Info: •«}] Y U N D A l 29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and

winbond bios

Abstract: 49F002 Winbond Electronics WINBOND Phoenix Bios IC pin Number 29F002 W29C020C W49F002
Contextual Info: Application Note-03 2M FLASH COMPATIBILITY APPLICATION NOTE GENERAL DESCRIPTION Due to Winbond 2 Mega Flash supply change, W29C020C part has been replaced by W49F002 part. In this change, customers should notice the following engineering issues. RESET Pin Connection Issue

Contextual Info: AMDH 29F002B/29F002NB 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: — 29F002T/29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

a1601

Abstract: AM29F002BT
Contextual Info: AMD£t Vol t - onl y 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory Flash DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations — Embedded Program algorithm automatically

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: PRELIMINARY AM D i i 29F002/29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations