29F002 Search Results

IC 555 architecture

Contextual Info: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: 29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29F002

Abstract: A1317 AS29F002B-120SC
Contextual Info: High Performance 256Kx8 5V CMOS Flash EEPROM 29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT 29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

29053

Contextual Info: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

XX02H

Abstract: 29F002T FHD 100 D
Contextual Info: CAT29FN002 Advance Information Advance Information CAT29FN002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES • 100,000 Program/Erase Cycles and 10 Year ■ Fast Read Access Time: 90/120 ns Data Retention ■ Sectored Architecture: ■ End of Program/Erase Cycle Detection

Contextual Info: — 29F002NT/29F002NB AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: Advance Information CAT29FN002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120 ns ■ Sectored Architecture: - One 16-KB Boot Sector •Top or Bottom Locations

1A-2K

Contextual Info: 29F002 S Advance Information Advance Information 29F002 2 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: - One 16-KB Boot Sector

Contextual Info: INDEX NEW ADVANCED INFORMATION 29F002/ 29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%

Contextual Info: 29F002RT, 29F002RB 262144 BY 8-BIT FLASH MEMORIES SMJS848A-MARCH 1997- REVISED NOVEMBER 1997 PRODUCTPREVlewWomwttoncooc*mi products Intht lefinfivt or S phaw of dtwtfepawnt. O m e tte te dad mé otìm A m eedw lyfB elfcTeesiw troneitem ew M «heriatto

Contextual Info: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes 29F002T 29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical

AS19F

Abstract: 29F2C F002T
Contextual Info: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r

29F002N

Contextual Info: PRELIMINARY AM D i i 29F002/29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

29F002NB

Contextual Info: AMDü PRELIMINARY 29F002B/29F002NB 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 Volt-only operation for read, erase, and program operations Top or bottom boot block configurations

Contextual Info: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t

Contextual Info: PRELIMINARY A M D ii Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: — 29F002T/29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

C164

Abstract: C164CI DIP-40 PCA82C251 P-51 Funkamateur amd 29F010 flash memory
Contextual Info: DIPmodul-164 Hardware-Manual Ausgabe Februar 2001 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG DIPmodul-164 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das