29F002T Search Results

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT 29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

Contextual Info: — 29F002T/Am29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

29f002

Contextual Info: MX29F002/002NT/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%

Contextual Info: 29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES • • • • • • |_^ ^ _ Single Power Supply Supports 5-V ±10% Read/Write Operation O rganization:. 262144B y8 Bits Array-Blocking Architecture - One 16K-Byte Protected-Boot Sector

Contextual Info: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes 29F002T M29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical

29F002N

Contextual Info: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

Contextual Info: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t

Contextual Info: — 29F002T/Am29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: 29F002T, M29F002NT M29F002B 2 Mbit 256Kb x8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1Ojas typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: H ig h P e rfo rm a n ce •■ 2S6KX8 II AS29F002 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash EEPROM Preliminary information Features • O r g a n iz a t io n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 5 m A m a x im u m read current

m29f002

Contextual Info: FLASH MEMORY CMOS MB 2T-90 X/-1 2-x/M B M 29 F002 B - 90-X/-1 2-x FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Package option

MX29F002BQC-70G

Abstract: 29F002T
Contextual Info: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

29F002T90

Contextual Info: Prelim inary inform ation Features • Organization: 256KX8 • Sector architecture • Low power consumption - O ne 16K; tw o 8K; o n e 32K; a n d th re e 64K b y te sectors - B oot co d e sector arch itectu re— T to p o r B (b o tto m ) - Erase any c o m b in a tio n o f sectors o r full ch ip

Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current

Contextual Info: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^s typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: SGS-THOMSON 29F002T IIIIM Jì ILIì M W IIÈ Ì 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

29f002t

Contextual Info: ADVANCED INFORMATION ly p a c MX29F002/002N 2M -B IT [256K x 8] C M O S F L A S H M E M O R Y FEATURES • 2 6 2 ,1 4 4 x 8 only • Fast ac cess tim e: 4 5 7 5 5 /7 0 /9 0 /1 2 0 n s *p le a s e refer • to A C /D C characteristic table Low pow er consum ption