S29LV Search Results

29LV800

Abstract: s551 29LV800-120 i1-40q02-a 199S AS29LV800 0000H-3FFFFH 29LV8008
Contextual Info: H ig h p e r f o r m a n c e 1 M x 8 / 51 2 K x 1 6 3 V C M O S F la s h E E P R O M - I I A S29LV 800 , 1 M X 8 /5 1 2 K X 1 6 CMOS F lash EPROM Advance information Features • O r g a n i z a t i o n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n

Contextual Info: COTS PEM BOOT SECTOR FLASH S29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation

Contextual Info: Preliminary information •■ S29LV008 II 3V 1Mx 8 CMOS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d fifte e n 64K b y te secto rs - B oot c o d e se c to r a rc h ite c tu re — T top o r B (b o tto m )

LH536

Abstract: AS29X 29LV002-150 kje z1
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

AOCM A13

Abstract: de s5h 556 jrc X51L
Contextual Info: Advance information Features • O rganization: 1M x 8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip • Single 2 .7 -3 .6 V p o w e r su p p ly for re a d /w r ite op eration s

MX29LV160D

Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2

29LVS00

Abstract: 29LV800 AS29 AS29LV800 LI400
Contextual Info: Advance informatio S29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)

29LV008

Abstract: 29LV008-100 str g 5551 PJ 0199 AS29 AS29LV008B 29LV008-80 100S-C 9LV008-120TI
Contextual Info: H ig h p e rfo rm a n c e 8 M egabit 3V CMOS Flash EEPROM S29LV008 II A 8 Megabit CMOS FJüsh EPRO M Advance information Features • Organization: 1M x 8 • Sector architecture • Low pow er consumption - 10 m A typical re a d c u rre n t - 3 0 m A typical p ro g ra m c u rre n t

Flash

Abstract: AS29LV016 S29LV016
Contextual Info: COTS PEM BOOT SECTOR FLASH S29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS High performance — Access times as fast as 70 ns @ Enhanced Temp [/ET] Commercial Off The Shelf, up-screened device

Contextual Info: Preliminary information •■ S29LV002 3V 256Kx8 CMOS Flash EE PROM Features • O rganization: 256K x8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

Contextual Info: H igh perfo rm an ce 8 M egabit 3V CMOS Flash EEPROM . S29LV008 II A 8 M eg ab it C M O S F la sh E P R O M Advance inform ation Features • Organization: 1M x 8 • Sector architecture - O ne 16K; tw o 8 • L o w p o w e r c o n s u m p t io n - 10 m A typical re a d c u rre n t

Contextual Info: H igh p erform ance 256KX8 3V CMOS Flash EEPROM H S29LV002 A 2S6KX8 CMOS Flash EEPROM Prelim inary inform ation Features • O rg a n iz a tio n : 256 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top o r B (bottom )

TSOP1-48

Abstract: AS29LV016JTRGR-70/XT
Contextual Info: COTS PEM BOOT SECTOR FLASH S29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Single Power Supply Operation – Full voltage range: 2.7 to 3.6 volt read and write operations for

Contextual Info: COTS PEM BOOT SECTOR FLASH S29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation

29LV800

Abstract: psop 08
Contextual Info: Advance information Features •Organization: 1M x 8 / 5 12 K x 1 6 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture— T top or B (bottom)

29LV008

Abstract: 29ly008120 A529 AS29 29LV008-100
Contextual Info: Preliminary information •■ S29LV008 1 3V 1M x 8 CM OS Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector a rc h ite c tu re - O n e 16K ; t w o 8 • L o w p o w e r c o n s u m p tio n - 10 m A ty p ic a l r e a d c u r r e n t K; o n e 3 2 K ; a n d f ifte e n 6 4 K b y te s e c to rs

package tsop1

Abstract: AS29LV016
Contextual Info: COTS PEM BOOT SECTOR FLASH S29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • • • • • • • • • • Single Power Supply Operation