2SK2204 Search Results

Contextual Info: 2SK2204 L , 2SK2204(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

2SK2204

Contextual Info: 2SK2204 L , 2SK2204 S Silicon N Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC – DC

2SK2204S

Abstract: 2SK2204
Contextual Info: 2SK2204 L , 2SK2204 S Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC —DC

Hitachi DSA001652

Contextual Info: 2SK2204 L , 2SK2204(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

2SK2204L

Contextual Info: 2SK2204 L , 2SK2204(S) Silicon N-Channel MOS FET HITACHI ADE-208-272 1st. Edition Application H ig h sp eed p o w e r sw itch ing Features • L o w on -re sista n c e • H ig h sp eed sw itch ing • L o w d riv e current • 4 V gate drive d ev ice can be driven from 5 V source

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

2SK2206

Abstract: Hitachi DSA001652
Contextual Info: 2SK2206 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control

Contextual Info: 2SK2205 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source • Suitable for DC - DC converter, Motor control

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2sk2206

Contextual Info: 2SK2206 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • Low drive current • H igh speed sw itching • 4 V gate drive device can be driven from 5 V source • Suitable for D C -D C converter, M otor control

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Contextual Info: 2SK2206 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter, Motor control

Contextual Info: 2SK2205 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Lo w drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter. Motor control

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK2205

Abstract: 2SK22043 Hitachi DSA001652
Contextual Info: 2SK2205 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control

2SK2206

Contextual Info: 2SK2206 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source • Suitable for DC —DC converter, Motor control

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

2SK2296

Abstract: 2sk2450 K2460 2SK2295 22BW
Contextual Info: POWER M ÜSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2sk1058 equivalent

Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Contextual Info: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS