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    2SJ68 Search Results

    2SJ68 Datasheets (13)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ68
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.93KB 1
    2SJ68
    Unknown FET Data Book Scan PDF 92.14KB 2
    2SJ68
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90.68KB 1
    2SJ68
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 167.53KB 1
    2SJ680
    Toshiba Field Effect Transistor / Silicon P-Channel MOS Type Original PDF 212.51KB 6
    2SJ680
    Toshiba Japanese - Transistors - Mosfets Original PDF 308.28KB 7
    2SJ681
    Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Original PDF 255.7KB 6
    2SJ681(Q)
    Toshiba 2SJ681 - MOSFET P-CH 60V 5A PW-MOLD Original PDF 180.07KB 6
    2SJ683-TL-E
    SANYO Electric FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 65A ZP Original PDF 4
    2SJ687
    NEC MOS FIELD EFFECT TRANSISTOR Original PDF 160.35KB 8
    2SJ687-ZK-E1-AY
    NEC MOS FIELD EFFECT TRANSISTOR Original PDF 160.35KB 8
    2SJ687-ZK-E1-AY
    Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -20V -20A TO-252 Original PDF 10
    2SJ687-ZK-E2-AY
    NEC MOS FIELD EFFECT TRANSISTOR Original PDF 160.36KB 8
    SF Impression Pixel

    2SJ68 Price and Stock

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    Toshiba America Electronic Components 2SJ680(Q)

    Trans MOSFET P-CH Si 200V 2.5A 3-Pin(3+Tab) PW-Mold2
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    Verical 2SJ680(Q) 29,778 961
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    Rochester Electronics 2SJ680(Q) 29,778 1
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    SANYO Semiconductor Co Ltd 2SJ684-TL-E

    2SJ684-TL-E
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    Verical 2SJ684-TL-E 16,500 154
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    Rochester Electronics 2SJ684-TL-E 16,500 1
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    • 100 $1.96
    • 1000 $1.75
    • 10000 $1.65
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    Renesas Electronics Corporation 2SJ687-ZK-E2-AY

    Trans MOSFET P-CH 20V 20A 3-Pin(2+Tab) DPAK T/R
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    Verical 2SJ687-ZK-E2-AY 2,500 237
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    Rochester Electronics 2SJ687-ZK-E2-AY 2,500 1
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    • 1000 $1.14
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    Renesas Electronics Corporation 2SJ687-ZK-E1-AY

    Trans MOSFET P-CH 20V 20A 3-Pin(2+Tab) MP-3Z T/R
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    Verical 2SJ687-ZK-E1-AY 1,020 3
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    Avnet Americas 2SJ687-ZK-E1-AY Tape & Reel 12 Weeks 2,500
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    Arrow Electronics 2SJ687-ZK-E1-AY Cut Strips 1,020 6 Weeks 1
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    TE Connectivity ROX2SJ680R

    - Boxed Product (Development Kits) (Alt: 6-1625890-4)
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    Avnet Americas ROX2SJ680R Box 14 Weeks, 1 Days 12,000
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    Newark () ROX2SJ680R Bulk 2,918 10
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    ROX2SJ680R Bulk 12,000
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    Avnet Abacus ROX2SJ680R 17 Weeks 12,000
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    Master Electronics ROX2SJ680R
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    2SJ68 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SJ684 Ordering number : ENA1058 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    2sj684ena1058a1058-4/4 PDF

    J681

    Abstract: 2SJ681 tr j681
    Contextual Info: 2SJ681 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ681 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 1.5±0.2 単位: mm 6.5±0.2 5.2±0.2 0.6 MAX.


    Original
    2sj681j681tr j681 PDF

    2SJ680

    Abstract: J680
    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original
    2sj680j680 PDF

    2SJ684

    Abstract: A1058 100v 23A P-Channel MOSFET
    Contextual Info: 2SJ684 Ordering number : ENA1058 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ684 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    2sj684ena1058pw10sa1058-4/4+2a1058100v 23a p-channel mosfet PDF

    2SJ687

    Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)


    Original
    2sj6872sj687-zk-e1-ay2sj687-zk-e2-ayo-252+1d1871 PDF

    J680

    Abstract: TOSHIBA NOTE 2SJ680
    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original
    2sj680j680toshiba note PDF

    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOS V 2SJ680 Switching Applications Unit: mm 1.5 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 A (max) (VDS = −200 V)


    Original
    2sj680 PDF

    2SJ680

    Abstract: J680
    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original
    2sj680j680 PDF

    J681

    Abstract: transistor J681 j681 transistor 2SJ681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    2sj681j681transistor j681j681 transistor PDF

    zp 33a

    Abstract: diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057
    Contextual Info: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    2sj683ena1057pw10sa1057-4/4+4zp 33adiode marking 33a on semiconductormarking 33a on semiconductora1057 PDF

    transistor J681

    Abstract: 2sj681 J681 j681 transistor
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    2sj681transistor j681j681j681 transistor PDF

    2SJ680

    Abstract: J680
    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original
    2sj680j680 PDF

    2SJ681

    Abstract: J681 tr j681 J68-1
    Contextual Info: 2SJ681 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII 2SJ681 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 1.5±0.2 単位: mm 6.5±0.2 5.2±0.2 0.6 MAX.


    Original
    2sj681j681tr j681j68-1 PDF

    Contextual Info: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    2sj683ena1057a1057-4/4 PDF

    transistor J681

    Abstract: J681 j681 transistor 2sj681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 z 4-V gate drive 1.6 z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    2sj681transistor j681j681j681 transistor PDF

    2sj6806

    Abstract: 2SJ680 J680
    Contextual Info: 2SJ680 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ680 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 1.5 ± 0.2 単位: mm 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


    Original
    2sj68020070701-ja2sj6806j680 PDF

    transistor J681

    Abstract: 2SJ681 J681 j681 transistor tr j681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original
    2sj681transistor j681j681j681 transistor+1tr j681 PDF

    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2±0.2 High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)


    Original
    2sj680 PDF

    J680

    Abstract: 2SJ680
    Contextual Info: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOS V 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)


    Original
    2sj680j680 PDF

    j681 transistor

    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5±0.2 Unit: mm 5.2±0.2 z 4-V gate drive z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original
    2sj681j681 transistor PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original
    5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025 PDF

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original
    o-220mfo-220fio-220fi5ho-220ml+15o-126o-126lpo-126mlo-220fi5h-hbo-220fi5h-hatn6q042sk41002sj5852sk4100ls2sk4101lsinv2502sk4096ls2sj4062sk3745ls2sj584 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Contextual Info: CONTENTS Index . 5 General Information . 9


    Original
    d-856222sk 42072sk1762sk975 equivalent+72sj1772sj318pm45502c2sk22252sk1058 2sj162pwm 100w audio amplifier2sk1336 equivalent PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


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    sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk4075upa27242sk42122sk4213upa2804t1l2sk4145-s192sk4202upa22112sk3919 PDF