2SK2075 Search Results

Contextual Info: 2SK2075 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low Drive Current • No secondary breakdown • Suitable for Switching regulator Outline 2SK2075 Absolute Maximum Ratings Ta = 25 °C

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK2075

Abstract: 2SK2075-E PRSS0004ZE-A SC-65
Contextual Info: 2SK2075 Silicon N Channel MOS FET REJ03G0994-0200 Previous: ADE-208-074 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Contextual Info: 2SK2075 Silicon N Channel MOS FET REJ03G0994-0200 Previous: ADE-208-074 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator

Hitachi DSA002781

Contextual Info: 2SK2075 Silicon N-Channel MOS FET ADE-208-074 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3P D

2SK2075

Abstract: DSA003636
Contextual Info: 2SK2075 Silicon N-Channel MOS FET ADE-208-074 Z 1st. Edition Mar. 1993 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline

Hitachi DSA002748

Contextual Info: 2SK2075 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate

ADE-208-074

Abstract: Hitachi DSA00279
Contextual Info: 2SK2075 Silicon N-Channel MOS FET ADE-208-074 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline 2SK2075

fet K 793

Contextual Info: 2SK2075 Silicon N-Channe] MOS FET HITACHI A D E-208-074 1st. Edition Application H igh sp e e d p o w e r sw itch in g Features • L o w o n -re sista n e e • H igh sp eed sw itch in g • L o w D riv e C u rre n t • N o seco n d a ry b re a k d o w n

2SK2075

Abstract: Hitachi DSA003734
Contextual Info: 2SK2075 Silicon N-Channel MOS FET ADE-208-074 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator Outline TO-3P D

2SK2075

Contextual Info: 2SK2075 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on–resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator 2 1 1 2 3 1. Gate 2. Drain 3. Source

2SK2075

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK2075

Abstract: 2SK2075-E PRSS0004ZE-A SC-65
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SJ1334

Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4