2SD1754 Search Results

transistors 2sd

Abstract: 2SD1754 2SD1754A
Contextual Info: P ow er Tra n sisto rs 2SD1754, 2SD1754A 2SD1754, 2SD1754A Silicon PNP Triple-Diffused Planar Type High h FE, • P ack age D im ension s P ow er A m plifier U n i t ! mm ■ F e a tu re s • High D C c u rre n t gain h fE • Good lin earity o f DC c u rr e n t gam (h FE)

2SD1754

Abstract: 2SD1754A
Contextual Info: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1754 Rating Unit VCBO 80 V VCEO Emitter-base voltage (Collector open) 60 1 6 V

2SD1754

Abstract: 2SD1754A
Contextual Info: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio +0.3 1.0±0.2 10.0 –0. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE

2SD1754

Abstract: 2SD1754A
Contextual Info: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio +0.3 1.0±0.2 10.0 –0. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE

2SD1754

Abstract: 2SD1754A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2SD1754 Collector-base voltage

2SB1754

Abstract: 2SB175
Contextual Info: Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1754 Rating Unit VCBO 80 V VCEO Emitter-base voltage (Collector open) 60 1 6 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage (Emitter open) 2SD1754 Rating Unit

Contextual Info: 2SD1754O Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage (Emitter open) 2SD1754 Rating Unit

Contextual Info: 2SD1754, 2SD1754A Power Transistors 2SD1754, 2SD1754A Silicon PNP Triple-Diffused Planar Type • Package D im ensions High hFE, Power A m plifier ■ Features • High D C c u r re n t gain h fE • G ood lin e a rity of DC c u r r e n t gam (Iif e ) • “ I T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin for d ire c t so ld e rin g

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD1761

Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2sd2520

Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Contextual Info: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2502

Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691